First-principles study of the Li(Y/Lu)SiO4:Ce3+,Sm3+ storage phosphor

Single-layer intrinsic 2H-phase LuX 2 (X = Cl, Br, I) with large valley polarization and anomalous valley Hall effect

“…In some previous work, some U values of 4-6 have been applied to the Lu atom. [50][51][52][53] In order to better illustrate the dependence of SL-LuX 2 on the U value, we set the range of U values to 1-8.…”

A considerable improvement of long-persistent luminescence in LiLuSiO4:Pr3+ phosphors by Sm3+ co-doping for optical tagging applications

“…The Li(Lu,Y)(Si,Ge)O 4 compounds have been recently regarded as promising storage phosphor hosts with large bandgaps and suitable crystal fields for Ce 3+ and Bi 3+ luminescence centers. 30–33 Their defect properties were also theoretically studied by Zhou et al 34 and Qiao et al 35 It is demonstrated that abundant intrinsic defects including antisites and vacancies can provide a considerable amount of energy traps, making Li(Lu,Y)(Si,Ge)O 4 ideal host candidates for persistent luminescence. However, to the best of our knowledge, there is no specific focus on the deep UV persistent luminescence of Pr 3+ and/or Gd 3+ in the LiLuSiO 4 host.…”

“…The UVC afterglow performance can be significantly improved by co-doping Sm 3+ ions, indicating that Sm 3+ ions act as efficient electron traps in the LiLuSiO 4 :Pr 3+ ,Sm 3+ phosphor for UVC persistent luminescence, as confirmed in other visible-emitting persistent phosphors. 30,33,34,[36][37][38] Besides, by utilizing persistent energy transfer from Pr 3+ to Gd 3+ , NB-UVB afterglow of Gd 3+ is realized under the excitation of an X-ray source or a 254 nm UV lamp. We believe that the as-synthesized deep UV persistent phosphors will be beneficial for many important applications that require invisible and interference-free deep UV luminescence such as optical tagging technology and optical information storage in a bright environment.…”