This article uses first principles calculation methods to study the MoSi<sub>2</sub>N<sub>4</sub>/GeC heterostructures, and calculates its structural, electronic, and optical properties. It also explores the effects of applying different biaxial strains and vertical electric fields on the band structure and optical absorption characteristics of the heterostructures. MoSi<sub>2</sub>N<sub>4</sub>/GeC heterostructures is an indirect bandgap semiconductor with a bandgap of 1.25 eV, with the built-in electric field direction pointing from the GeC layer to the MoSi<sub>2</sub>N<sub>4</sub> layer. In addition, its photogenerated carrier transfer mechanism conforms to the S-type heterostructures mechanism, thus improving the oxidation reduction potential of photocatalytic water decomposition, making it fully meet the requirements of photocatalytic water decomposition with pH=0-14. Under biaxial strain, the band gap first increases and then decreases with the increase of compressive strain, and the light absorption performance in the ultraviolet region increases with the increase of compressive strain. The band gap decreases with increasing tensile strain, and the light absorption performance in the visible light region is enhanced compared to that under compressive strain. Under a vertical electric field, the band gap increases with the increase of a positive electric field and decreases with the increase of a negative electric field. In summary, MoSi<sub>2</sub>N<sub>4</sub>/GeC heterostructures can be used as an efficient photocatalytic material in fields such as optoelectronic devices and photocatalysis.