First principles reaction processes of Co(CO)3NO as an atomic layer deposition precursor on SiO2 and Co surfaces
Nickolas M. Ashburn,
Xiuyao Lang,
Youhwan Jo
et al.
Abstract:As devices continue to scale down in size, new patterning and deposition techniques are growing in interest. Atomic layer deposition (ALD) has shown to have promising results in selective and low-temperature deposition processes with high conformality and atomic layer control. These properties have led to the increased dependence on ALD process for device fabrication. To further achieve low-temperature deposition, electron enhanced ALD (EE-ALD) has been introduced. EE-ALD is shown to be a viable option for dep… Show more
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