2016
DOI: 10.1103/physrevb.94.094109
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First-principles prediction of the softening of the silicon shock Hugoniot curve

Abstract: Shock compression of silicon (Si) under extremely high pressures (>100 Mbar) was investigated by using two first-principles methods of orbital-free molecular dynamics (OFMD) and path integral Monte Carlo (PIMC). While pressures from the two methods agree very well, PIMC predicts a second compression maximum because of 1s electron ionization that is absent in OFMD calculations since Thomas-Fermi-based theories lack shell structure. The Kohn-Sham density functional theory is used to calculate the equation of sta… Show more

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Cited by 45 publications
(50 citation statements)
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“…Based on this comparison and the K shell ionization analysis of MgO in Fig. 4 we conclude that the upper part of the high com- [30,71], oxygen [73], neon [31], aluminum [38], and silicon [32,36]. This comparison supports the interpretation that the broad temperature interval where the compression of MgO exceeds 4.5 can be attributed to the ionization of the K shell electrons of the oxygen and magnesium nuclei.…”
Section: Single and Multi Shock Hugoniot Curvessupporting
confidence: 77%
“…Based on this comparison and the K shell ionization analysis of MgO in Fig. 4 we conclude that the upper part of the high com- [30,71], oxygen [73], neon [31], aluminum [38], and silicon [32,36]. This comparison supports the interpretation that the broad temperature interval where the compression of MgO exceeds 4.5 can be attributed to the ionization of the K shell electrons of the oxygen and magnesium nuclei.…”
Section: Single and Multi Shock Hugoniot Curvessupporting
confidence: 77%
“…At low to intermediate temperatures (T < 10 6 K), standard, orbital-based, Kohn-Sham DFT-MD is a suitable option to derive the EOS because it fully accounts the bonding effects and bound states within certain approximations of the exchange-correlation functional. However, the need to explicitly compute all partially occupied electronic orbitals causes DFT-MD to become computationally intractable beyond temperatures of roughly 10 6 K. Recent work on orbital-free DFT 48,50,60,61 and extended DFT-MD with free electron approximation for high energies 51 have made progress toward overcoming this difficulty, but their general applicability and accuracy needs to be further examined.…”
Section: Simulation Methodsmentioning
confidence: 99%
“…Recently, we have been developing PIMC for simulating heavier elements [46][47][48][52][53][54][55][56][57][58] , which is efficient at high temperatures, and can be used to complement DFT-MD calculations that are efficient at comparatively low temperatures. Combined data from PIMC and DFT-MD provide a coherent EOS over a wide density-temperature range that spans the condensed matter, WDM, and plasma regimes.…”
Section: Introductionmentioning
confidence: 99%
“…However, there are important limitations to their accuracy. OF-DFT replaces the orbital-based kinetic energy functional with a density-based TF functional and, therefore, is also unable to account for shell ionization effects [54]. On the other hand, DFT-based average atom methods only compute shell structure for an average ionic state and, subsequently, it is not well-suited for studies of compounds.…”
mentioning
confidence: 99%