2023
DOI: 10.1016/j.ijhydene.2022.11.203
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First principles of Si-doped BC2N single layer for hydrogen evolution reaction (HER)

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Cited by 13 publications
(5 citation statements)
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“…32 The generalized gradient approximation (GGA) functional with the parametrization of Perdew-Burke-Ernzerhof (PBE) was employed to describe the exchange-correlation term, 33,34 which has been used to investigate the electronic properties of a wide variety of materials for different applications. [35][36][37][38] The PAMAM dendrimer was modelled by three geometries with different levels of complexity, as represented in Fig. 1.…”
Section: Methodsmentioning
confidence: 99%
“…32 The generalized gradient approximation (GGA) functional with the parametrization of Perdew-Burke-Ernzerhof (PBE) was employed to describe the exchange-correlation term, 33,34 which has been used to investigate the electronic properties of a wide variety of materials for different applications. [35][36][37][38] The PAMAM dendrimer was modelled by three geometries with different levels of complexity, as represented in Fig. 1.…”
Section: Methodsmentioning
confidence: 99%
“…The calculated values of the work function of all the Pd@SiX SACs, except for Pd@SiBi, lie between the redox potentials of water, which is an important property for a material to be used as a catalyst for water splitting. 63…”
Section: Resultsmentioning
confidence: 99%
“…B It is known that h-BC 2 N is a direct band gap semiconductor with a band gap of approximately 1.6 eV, and g-C 6 N 6 nanoribbons are direct band gap semiconductors with a band gap of around 1.5 eV [17,18]. The band gap of the isolated system is calculated using the same method and approximation as that of the combined system, and the calculated result is 0.042 eV for h-BC 2 N nanoribbons and 1.72 eV for g-C 6 N 6 nanoribbons.…”
Section: Resultsmentioning
confidence: 99%
“…Through extensive research, scientists have synthesized a material called h-BC 2 N, which has properties different from graphene and h-BN and exhibits excellent optical and electronic characteristics. Moreover, h-BC 2 N is a direct band gap semiconductor with a band gap of approximately 1.6 eV [17]. It is stable at room temperature.…”
Section: Introductionmentioning
confidence: 99%