First-principles investigations of structural, electronic and thermoelectric properties of β-Sb/GeI2 van der Waals heterostructures

Ultrafast Charge Transfer Mechanism in Van der Waals Heterostructures of Topological Insulators with 2D Materials

“…Table SI summarizes some of the leading examples of vdW and their applications in different fields in the Supporting Information. It can be found that despite the explorations of different applications of vdW of 2D materials with TMs, there is limited or no report on their charge carrier and phonon dynamics, where such studies are vital in confirming the potential of such heterostructures in applications. − ,− ,− In the present study, the fabrication of vdW of bismuth telluride (Bi 2 Te 3 ), a well-known TM, with graphene, fluorographene, and molybdenum disulfide (MoS 2 ) atomic layers via a simple stacking of layers over a few layers of TM is achieved. These three different 2D systems are considered to form heterostructures with the TM and due to the difference in the parent properties of these layers, such as one is a semimetallic 2D system (graphene , ), the second one is a semiconducting defective 2D system (flurographene , ), and the third one is a 2D semiconductor with excitonic carriers (MoS 2 ).…”

“…Remarkable properties of van der Waals heterostructures (vdW) of atomically thin layered materials such as graphene, transition-metal dichalcogenides (TMDs), and other topological layered materials have opened up a plethora of new avenues for fundamental and applied research. − Different applications of several such interfaces have been explored in the recent past with the help of topological layered materials and their heterostructures. ,,− It has been predicted that interfaces of other atomic layers with topological materials can bring interesting synergistic properties, and they can find applications in optoelectronics, quantum computing, and spintronics. − Moreover, recently, the assembly of graphene with certain TMDs has been proposed as a potential system for broadband photodetection . In such vdW assembly, TMDs offer a high light absorption and hence acting as an active layer in the photodetector, while graphene can enchance the photocarrier response due to its high conductivity. ,,− Graphene/Bi 2 Te 3 and graphene/Bi 2 Se 3 are some leading examples of vdW of graphene with topological materials (TM) ,,− where the graphene/Bi 2 Se 3 heterostructures induce a photogating effect coupled with the photovoltaic effect via tuneable quantum tunneling and thereby enhance the responsivity of photodetectors .…”

Large thermoelectric transport in magnetically coupled CrI3/1T-MoS2 vdW heterostructure via spin–charge interconversion

“…In this regard, vdW systems with high-quality interfaces can provide a single platform to realize magnetism-derived TE behavior via the MPE. For example, previously reported non-MPE vdW heterostructures exhibit unique electronic structures with enhanced TE properties [1,6,11,[19][20][21][32][33][34][35][36][37][38][39][40][41][42]. As compared to their individual monolayers (MLs).…”