Abstract:We study the electronic, optic and transport properties of both bulk materials ErN and Er0.125Ga0.875N, where crystallize in zinc-blind and wurtzite structure respectively which are materials involved form a quantum well devices.Based on density functional theory, by applying the full-potential linearized augmented plane-wave method with spin orbit coupling effect. Theanalysis of the electronic properties show that the ErN and Er0.125Ga0.875N has a band gap at 0.79 and 3.38eV respectively. on the other hand, t… Show more
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