First-Principles Investigation of Janus MgZnXY (X, Y = O, S, Se, Te; X ≠ Y) Monolayers for Short-Channel Field Effect Transistor
Nayereh Ghobadi,
Somayeh Gholami Rudi,
Samaneh Soleimani-Amiri
Abstract:Exploring new two-dimensional materials as the channel
of ultrascaled
field effect transistors (FETs) is in great demand to sustain Moore’s
law. Herein, using first-principles calculations, we propose Janus
MgZnXY (X, YO, S, Se, and Te; X ≠ Y) monolayers and
examine their energetic, dynamic, and thermal stability. The electronic
band structures reveal that all stable structures are semiconductors
with bandgaps ranging from 2.03 to 3.40 eV (HSE06) and extremely high
electron mobilities. Inspired by the excepti… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.