First principles investigation of electronic structure and associated properties of zinc orthosilicate phosphors

Luminescent properties of Zn2SiO4:Mn2+ phosphor under UV, VUV and CR excitation

“…The excitation peaks were observed at 132, 156, 172, 189, 243 and 273 nm, respectively. In symmetric ZnO 4 cluster, the energy separation between eorbit and t 1 -orbit has been known to be around 9.529 eV [6]; therefore, the excitation band near 132 nm (9.47 eV) in zinc silicate could be assigned to absorption of the ZnO 4 cluster. According to Ref.…”

“…According to Ref. [6], the gap between the highest occupied level and lowest unoccupied level is found to be 7.232 eV (171 nm) calculated for the SiO 4 cluster in willemite. The observed excitation peak at 172 nm is in remarkably good agreement with the calculation; consequently the excitation peak at 172 nm could be ascribed to the absorption of SiO 4 cluster.…”

Synthesis and VUV photoluminescence of green-emitting X2–Y2SiO5:Tb3+ phosphor for PDP application

“…According to Ref. [12], the excitation band at about 170 nm could be assigned to the absorption of Si O bonds. It can be calculated that the charge transfer bands (CTB) of Tb O is at about 151 nm from the theory in Ref.…”

Effects of Si4+ and B3+ doping on the photoluminescence of BaMgAl10O17:Eu2+ phosphor under UV and VUV excitation

“…2 and 3 that the emission intensity of BaMgAl 10 O 17 :Eu 2+ could be enhanced by proper quantities of Si 4+ or B 3+ doping. It is clarify that the Si-O group efficiently absorbs UV and VUV lights and transfers the energy to the luminescent centers [8][9][10][11]. Moreover, it is well known that B-O group can absorb VUV lights [12][13][14] and H 3 BO 3 as the B source also acts as flux [15] which could improve the luminescence of phosphors.…”