Magnetism in graphene nanofragments arises from the spin polarization of the edge-states; consequently, as the material inexorably shrinks, magnetism will become a dominant feature whereas the bulk carrier mobility will be less relevant. We have carried out an ab initio study of the role of graphene-ultra-nanofragment magnetism on electronic transport. We present, as a proof-of-concept, a nanoscopic spin-polarized field-effect transistor (FET) with the channel and metallic contacts carved from a single graphene sheet. We demonstrate the selective tuning of conductance through electric-field control of the magnetic, rather than the charge, degrees of freedom of the channel, the latter typically employed in microscopic graphene FETs.
KeywordsSpintronics; FET; graphene diamond; graphene ribbon Similar to carbon nanotubes, graphene holds great promise for future electronics because of its outstanding electrical 1,2 , mechanical 3 , and thermal 4 properties. Because of its 2-dimensionality, however, graphene has the additional advantage for large-scale integration devices fabricated via solid-state lithographic techniques. The fabrication of all-carbon fieldeffect transistors (FETs), where the metallic leads, central dot, and gates are carved from a single sheet of graphite, is currently the subject of intense research 5,6 7 .Graphene displays exceptional high carrier mobility 1,2 allowing for microscopic graphene FETs that are faster than their silicon counterparts 8 . On the other hand, as electronics taps into nano-scale graphene ribbons or fragments (< 50 nm), the edge states become dominant. These states are robust for any random-shaped graphene nanofragments as long as the underlying honeycomb lattice is not substantially modified 9 . The edge-states of graphene ultra-nanofragments have been predicted to be magnetic 10,11 , where the various magnetic states lead to distinct electrical properties 12 . This magnetic ordering may be the underlying origin of the experimentally observed conductance switching 7,13 and band gap modulation 14,15 in graphene nanofragments.Following the silicon-electronics breakthrough microchip paradigm of (1) fabricating all necessary discrete electrical components and wiring from silicon and (2) integrating all these elements in the same silicon wafer, very-large-scale integration in all-carbon graphene devices will require (i) a robust building block analog to the silicon transistor, and (ii) seamless coupling of these nano-units through graphene nanoribbon interconnects, which will allow in turn for ballistic transport. Isolated diamond-shaped graphene flakes, * To whom correspondence should be addressed: luis.agapito@gmail.com. The effect of edge-states of graphene nanofragments on the transport properties in all-carbon spintronics is of central interest and importance and it has not been addressed theoretically thus far. In this article we use ab initio electronic structure and Landauer-Büttiker transport calculations to demonstrate, as a proof-of-concept, that diamond gra...