Atomically clean surfaces of semiconducting oxides efficiently mediate the interconversion of gas-phase O 2 and solidphase oxygen interstitial atoms (O i ). First-principles calculations together with mesoscale microkinetic modeling are employed for TiO 2 (110) to determine reaction pathways, assess appropriate rate expressions, and obtain corresponding activation energies and preexponential factors. The Fermi energy (E F ) at the surface influences the rate-determining step for both injection and annihilation of O i . The barriers range between 0.72−0.82 eV for injection and 0.60− 2.34 eV for annihilation and may be manipulated through intentional control of E F . At equilibrium, the microkinetic model and first-principles calculations indicate that interconversion of O i species in the first and second sublayers limits the rate. The effective pre-exponential factors for injection and annihilation are surprisingly low, probably resulting from the use of simple Langmuir-like rate expressions to describe a complicated kinetic sequence.