First principles calculation of the opto-electronic properties of (110) growth axis SiGe superlattices

Tair, F.; Sekkal, Nadir; Amrani, B.; Adli, W.; Boudaoud, L.

doi:10.1016/j.spmi.2006.11.002

Cited by 5 publications

(4 citation statements)

References 38 publications

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“…During the past decades, the Si/Ge superlattice (SL) has attracted much attention in semiconductor research due to its potential contribution to the development of new electronic and optoelectronic devices [ 1 – 6 ]. For example, the study of photoconductivity of Si/Ge SL is of remarkable importance for photodiodes as emitter and receiver for fast optical communication [ 5 ]. In its applications like the space electronic component, the microelectronic component, the solar cell and the space-based electronics [ 1 , 4 , 6 ], the optical and electronic properties of Si/Ge SL may be altered due to the bombardment of high-energy ions from space environment, resulting in performance degradation of the electronic devices.…”

Section: Introductionmentioning

confidence: 99%

A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation

et al. 2018

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In this study, the low-energy radiation responses of Si, Ge, and Si/Ge superlattice are investigated by an ab initio molecular dynamics method and the origins of their different radiation behaviors are explored. It is found that the radiation resistance of the Ge atoms that are around the interface of Si/Ge superlattice is comparable to bulk Ge, whereas the Si atoms around the interface are more difficult to be displaced than the bulk Si, showing enhanced radiation tolerance as compared with the bulk Si. The mechanisms for defect generation in the bulk and superlattice structures show somewhat different character, and the associated defects in the superlattice are more complex. Defect formation and migration calculations show that in the superlattice structure, the point defects are more difficult to form and the vacancies are less mobile. The enhanced radiation tolerance of the Si/Ge superlattice will benefit for its applications as electronic and optoelectronic devices under radiation environment.

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Section: Introductionmentioning

confidence: 99%

A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation

et al. 2018

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“…crystals with the little difference that the length of one primitive translation vector is different from the two other primitive vectors length; more details are given below. Some details and discussion on the symmetry of (001)-and (110)-oriented SLs can also be found in previous works (Gell et al, 1987;Tair et al, 2007;Badi et al, 2008). Details concerned with the (111)-SLs are more difficult to find in the literature but are not totally absent (Magri, 1990;Bungaro & Rabe, 2002).…”

Section: Crystallographic Investigationmentioning

confidence: 84%

“…To our knowledge the problem of SLs with various growthaxis directions has often been addressed by means of the envelope function approach (Kajikawa, 2012;Los et al, 1995;Hayakawa, Suyama et al, 1998a,b;Hayakawa, Takahashi, Kondo et al, 1988a,b;Haya-kawa, Takahashi, Suyama et al, 1988;Vina & Wang, 1986;El Khalifi et al, 1990;Gil et al, 1990) and rarely by other methods such as the tight-binding approach (Wang & Ting, 1995) or the first-principles methods (Assa Aravindh et al, 2012;Rubio et al, 1994;Picozzi et al, 1997;Magri, 1990;Bungaro & Rabe, 2002;Tair et al, 2007;Badi et al, 2008). The first-principles methods are particularly needed to investigate microscopically these specific systems.…”

Section: Introductionmentioning

confidence: 99%

Crystallographic input data for (001)-, (110)- and (111)-oriented superlattices

Touaa

Sekkal

2012

Acta Crystallogr Sect B

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General aspects concerned with (001)-, (110)- and (111)-oriented superlattices (SLs) have been investigated. In particular, the symmetry of these systems have been derived and given in detail. As a test, the obtained data have been utilized to calculate electronic structures and gaps of a standard GaAs/AlAs system using an accurate version of the first principle full potential linear muffin-tin orbital (FPLMTO) method based on a local-density functional approximation (LDA).

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“…It is well known that crystal orientations have a significant impact on their properties and their potential applications. They can be generated artificially during the growth process, but they can also occur naturally since a change of orientation can be induced by temperature or pressure [16,18].…”

Section: Introductionmentioning

confidence: 99%

First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN)n superlattices

2021

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Based on the full potential linear muffin-tin orbitals (FPLMTO) calculation within density functional theory, we systematically investigate the electronic and optical properties of (100) and (110)-oriented (InN)/(GaN)n zinc-blende superlattice with one InN monolayer and with different numbers of GaN monolayers. Specifically, the electronic band structure calculations and their related features, like the absorption coefficient and refractive index of these systems are computed over a wide photon energy scale up to 20 eV. The effect of periodicity layer numbers n on the band gaps and the optical activity of (InN)/(GaN)n SLs in the both growth axis (001) and (110) are examined and compared. Because of prospective optical aspects of (InN)/(GaN)n such as light-emitting applications, this theoretical study can help the experimental measurements.

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First principles calculation of the opto-electronic properties of (110) growth axis SiGe superlattices

Cited by 5 publications

References 38 publications

A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation

A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation

Crystallographic input data for (001)-, (110)- and (111)-oriented superlattices

First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN)n superlattices

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