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Bamgbose, M.K.; Adebambo, Paul O.; Solola, G.T.; Badmus, B. S.; Dare, Enock O.; Adebayo, G.A.

doi:10.1016/j.matlet.2018.03.153

Cited by 4 publications

(4 citation statements)

References 38 publications

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“…The high theoretical oscillator strength ( f =0.32) obtained for PANP was corroborated by a significantly high fluorescence radiative factor ( R fl =5.6×10 8 ) and quantum yield ( φ fl =0.34). Whereas, a non‐radiative PANA displayed negligible zero R fl and quantum yield ( φ fl =0.026) in DCM . After nucleophilic substitution of Br by piperazine a radiative transition S 0 →S 1 , identified as the HOMO→LOMO was allowed as a result of electron jump within the architectural model.…”

Section: Methodsmentioning

confidence: 99%

“…Whereas, a non-radiative PANA displayed negligible zero R fl and quantum yield (f fl = 0.026)i nD CM. [43] After nucleophilic substitution of Br by piperazine ar adiativet ransition S 0 !S 1 ,i dentified as the HOMO!LOMO was allowed as ar esult of electron jump within the architectural model.T herefore, the presence of emissive S1 which depends on solvents dielectric underpins the strong fluorescence of PANP,w hich is classified as polar in its excited state. Thus, the theoretical indication furthers upports PET mechanism.…”

mentioning

confidence: 99%

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Fluorescent‐Labeled Octasilsesquioxane Nanohybrids as Potential Materials for Latent Fingerprinting Detection

Dare

Vendrell-Criado

Jiménez

et al. 2020

Chemistry A European J

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The recent demand for fluorescent‐labeled materials (FLMs) in forensic security concepts such as latent fingerprints (LFs) that encode information for anti‐counterfeiting and encryption of confidential data makes necessary the development of building new and innovative materials. Here, novel FLMs based on polyhedral oligomeric silsesquioxanes (POSS) functionalized with fluorophores via “click” reactions have been successfully synthesized and fully characterized. A comprehensive study of their photophysical properties has displayed large Stokes's shift together with good photostability in all cases, fulfilling the fundamental requisites for any legible LF detection on various surfaces. The excellent performance of the hetero‐bifunctional FLM in the visualization of LF is emphasized by their legibility, selectivity, sensitivity and temporal photostability. In this study, development mechanisms have been proposed and the overall concept constitute a novel approach for vis‐à‐vis forensic investigations to trace an individual's identity.

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

Fluorescent‐Labeled Octasilsesquioxane Nanohybrids as Potential Materials for Latent Fingerprinting Detection

Dare

Vendrell-Criado

Jiménez

et al. 2020

Chemistry A European J

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“…As microelectronic devices continue to advance in terms of miniaturization, speed, and capability, effective thermal management emerges as a formidable challenge, particularly in domains such as microprocessors, LEDs, and high-power devices [1][2][3]. The search and study of materials with high thermal conductivity (K) are becoming increasingly important.…”

Section: Introductionmentioning

confidence: 99%

Strain-tunable electronic structure, optical and thermoelectric properties of BAs

Yu,

Li,

Wei

et al. 2024

Phys. Scr.

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Strain engineering stands as a reliable method for tailoring the physicochemical properties of materials to achieve desired performance. However, the effects of strain on the physicochemical properties of BAs remain unclear, impeding the comprehensive understanding of its practical performance. Here, employing first-principles calculations coupled with semiclassical Boltzmann transport theory, we investigate the dynamic stability, mechanical stability, electronic structure, and thermoelectric properties of cubic boron arsenide (BAs) under various strains. The results demonstrate that BAs maintains excellent stability throughout the triaxial strain range. The electronic structure of BAs is less affected by strain. Young's modulus and Poisson's ratio show a corresponding linear increase when the compression strain increases. The optical absorption coefficient in the visible region of BAs under tensile strain showed an overall increasing trend, and the optical absorption coefficient in the visible wavelength region of BAs under 5% tensile strain was as high as 2×105 cm-1. The thermoelectric properties of BAs under tensile strain have been improved, and the ZT value of BAs under 5% tensile strain at 1500 K has been increased to 0.6. The research findings address the gaps in understanding the properties of BAs under strain and provide theoretical support for its applications in the fields of thermoelectrics and optoelectronics.

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“…They are alloys of interest to theorists and experimentalists because of their vast applications in industries. Group III-V semiconductor alloys are used in modern electronics and optoelectronics industries [1,2,3,4] Group III-Nitrides are the most studied in this group, because of their very interesting properties such as large bulk modulus, high thermal conductivity, high melting point [5]- [7], wideband gaps [8]- [10]. These wide band gaps can be altered by alloying to desirable values [11] over the electromagnetic spectrum from the infrared region to deep ultraviolet region [12]- [13].…”

Section: Introductionmentioning

confidence: 99%

Electronic and Optical Properties of Zinc-BlendeB x Ga 1−x N and Al x Ga 1−x N Ternary Alloys ByAlchemical Mixing of Pseudopotentials

Bamgbose

Adebayo

2023

Preprint

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Density Functional Theory-Generalised Gradient Approximation (DFT-GGA)is employed to study electronic and optical properties of B x Ga 1−x N and Al x Ga 1−x Nternary alloys. The properties determined are equilibrium lattice parameter,bulk modulus, band structure, density of states(DOS), band gap, real and imagi-nary dielectric functions, static dielectric function, refractive index, static refrac-tive index, absorption coefficient, and intrinsic interband absorption. The directband gaps of these alloys are tuned up to 2.95eV for B x Ga 1−x N and 3.12eV forAl x Ga 1−x N . The results obtained in this work are in excellent agreement withother theoretical and experimental works. The calculation indicates that thesealloys are potential candidates of ultraviolet Light Emitting Diodes(LEDs) andultraviolet Laser Diodes(LDs).

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First-principle survey of structural, electronic, and optical properties of zinc-blendeBxAlyGa1

Cited by 4 publications

References 38 publications

Fluorescent‐Labeled Octasilsesquioxane Nanohybrids as Potential Materials for Latent Fingerprinting Detection

Fluorescent‐Labeled Octasilsesquioxane Nanohybrids as Potential Materials for Latent Fingerprinting Detection

Strain-tunable electronic structure, optical and thermoelectric properties of BAs

Electronic and Optical Properties of Zinc-BlendeB x Ga 1−x N and Al x Ga 1−x N Ternary Alloys ByAlchemical Mixing of Pseudopotentials

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