2016
DOI: 10.1016/j.mssp.2015.12.017
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First principle study of spintronic properties for double perovskites Ba2XMoO6 with X=V, Cr and Mn

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Cited by 49 publications
(14 citation statements)
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“…Due to self‐interaction, the band gap of semiconductor or insulator is underestimated by GGA approximation. On inclusion of mBJ potential, electronic properties are expressed in a better way than other approximations, reducing inconsistency between the theoretical and experimental results . Thus, to correct self‐interaction and to treat d/f states more accurately, mBJ method is incorporated for the present analysis.…”
Section: Resultsmentioning
confidence: 99%
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“…Due to self‐interaction, the band gap of semiconductor or insulator is underestimated by GGA approximation. On inclusion of mBJ potential, electronic properties are expressed in a better way than other approximations, reducing inconsistency between the theoretical and experimental results . Thus, to correct self‐interaction and to treat d/f states more accurately, mBJ method is incorporated for the present analysis.…”
Section: Resultsmentioning
confidence: 99%
“…On inclusion of mBJ potential, electronic properties are expressed in a better way than other approximations, reducing inconsistency between the theoretical and experimental results. 48 Thus, to correct selfinteraction and to treat d/f states more accurately, mBJ method is incorporated for the present analysis. The DOS plot and band structure of Gd 3 AlX (X = B, N) is evaluated through mBJ method for a pressure range of 0-20 GPa.…”
Section: Electronic and Magnetic Propertiesmentioning
confidence: 99%
“…As GGA underestimates the band gap values, so an effective Coulomb interaction term U eff is used, where the parameter U eff = U – J (with J known as exchange interaction is also varied from 0 to 0.05 eV and Coulomb interaction (U) is varied from 0 to 3.75 eV), was obtained after the accurate optimization of the value used. The U values as used by others for similar type of DPs are checked for exact prediction of band structure at the Fermi level . The calculation of the impact of spin orbit coupling effect on such DPs, we have also taken into account the scheme of GGA + U + SOC.…”
Section: Computational Detailsmentioning
confidence: 99%
“…Numerous structure types and extensively useful properties have been widely investigated by using different elements on A, B or B´ sites. Double perovskites materials are exploited in a variety of physical properties such as half metallic [1], optoelectronic [2,3] magnetocaloric [4,5], antiferromagnetic [6], ferromagnetic [7], making their widely used in spintronic and optoelectronic devices [8,9]. In addition, double perovskites have been attracted attentions for thermoelectric performance due to good durability and low synthesis cost [10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%