2013
DOI: 10.1063/1.4807650
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First-principle prediction of single-carrier avalanche multiplication in chalcopyrite semiconductors

Abstract: A critical requirement for high gain and low noise avalanche photodiodes is the single-carrier avalanche multiplication. We propose that the single-carrier avalanche multiplication can be achieved in materials with a limited width of the conduction or valence band resulting in a restriction of kinetic energy for one of the charge carriers. This feature is not common to the majority of technologically relevant semiconductors, but it is observed in chalcogenides, such as Selenium and compound I 2 -II-IV-VI 4 all… Show more

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Cited by 2 publications
(1 citation statement)
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References 82 publications
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“…In fact, the substitution of In 3+ with Ga 3+ in CuInS 2 brings Ga 4s states to its conduction band. Since the Ga 4s and S 3p states are somewhat higher in energy, the conduction band of CuIn x Ga 1– x S 2 shifts to higher energies, and accordingly, their band gap increases. Also the valence-band offset is small because the valence band is primarily a bonding anion p state, and as a result the valence band offset should be small.…”
Section: Resultsmentioning
confidence: 99%
“…In fact, the substitution of In 3+ with Ga 3+ in CuInS 2 brings Ga 4s states to its conduction band. Since the Ga 4s and S 3p states are somewhat higher in energy, the conduction band of CuIn x Ga 1– x S 2 shifts to higher energies, and accordingly, their band gap increases. Also the valence-band offset is small because the valence band is primarily a bonding anion p state, and as a result the valence band offset should be small.…”
Section: Resultsmentioning
confidence: 99%