2020
DOI: 10.1088/2053-1591/ab6384
|View full text |Cite
|
Sign up to set email alerts
|

First principle calculations of structural, electronic, optical and thermoelectric properties of tin (II) oxide

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
6
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 11 publications
(8 citation statements)
references
References 18 publications
0
6
0
Order By: Relevance
“…The main reason for this improvement can be attributed to the suppression of spurious phases, as visible in the XRD patterns of Figure 10b, including tin(II) oxide (SnO), tin(IV) oxide (SnO 2 ), and tin(II) sulfide (SnS), which were formed due to loss of S. 65 Even though SnS possesses comparable transport properties to CTS, tin oxides, on the other hand, have much poorer transport properties (particularly SnO 2 , with n-type behavior), 66 which detrimentally affects the TEG's performance. In addition, sulfurization also improves the CTS electrical properties by assisting the formation of void-free CTS films, 67 as can be seen by reduced internal resistance from 27.3 to 10.8 kΩ from the slope of I−V curve, which in turn enhances the TEG's performance.…”
Section: Resultsmentioning
confidence: 99%
“…The main reason for this improvement can be attributed to the suppression of spurious phases, as visible in the XRD patterns of Figure 10b, including tin(II) oxide (SnO), tin(IV) oxide (SnO 2 ), and tin(II) sulfide (SnS), which were formed due to loss of S. 65 Even though SnS possesses comparable transport properties to CTS, tin oxides, on the other hand, have much poorer transport properties (particularly SnO 2 , with n-type behavior), 66 which detrimentally affects the TEG's performance. In addition, sulfurization also improves the CTS electrical properties by assisting the formation of void-free CTS films, 67 as can be seen by reduced internal resistance from 27.3 to 10.8 kΩ from the slope of I−V curve, which in turn enhances the TEG's performance.…”
Section: Resultsmentioning
confidence: 99%
“…The selected precursor SnCl 2 · 2H 2 O (Sigma-Aldrich purity 99.99%, Darmstadt, Germany) was initially dissolved in water. After dissolution, and with continuous stirring at low temperature, NH 4 OH was added until pH = 8 was obtained and hydrolysis occurred. Then, the temperature was increased up to 100 • C for 2 h. The final product was centrifuged and washed several times until reaching neutral pH and dried at 50 • C for 12 h.…”
Section: Methodsmentioning
confidence: 99%
“…SnO is a p-type semiconducting oxide which has demonstrated promising applicability as an anode for Li-ion batteries [1], coating for solar energy [2], gas sensing [3], and thermoelectricity [4], among other fields of technological research. However, few works can be found focused on SnO-based applications due to its inherent metastability, as it can be easily oxidized to the most stable SnO 2 .…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…On the other hand, tin monoxide, (tin oxide II, stannous oxide) (SnO, Sn 2+ ) romarchite, possesses p-type conductivity and often exhibits a layered structure with tetragonal space group P4/nmn (129) with lattice parameters a = b = 3.803 Å and c = 4.838 Å, corresponding to a litharge structure with a variable optical bandgap, ranging between E G ~2.5–3.4 eV [ 1 , 3 , 7 , 8 ]. In recent years, SnO has generated increasing interest in photocatalysis [ 9 , 10 ] and as a potential thermoelectric material, supported by first principle calculations [ 11 , 12 ] in part due to its low toxicity and abundance compared with other thermoelectric materials. However, its use is still under-explored due to limitations concerning its synthesis in a pristine form without other Sn-based oxides and its easy oxidation to SnO 2 .…”
Section: Introductionmentioning
confidence: 99%