First Measurement of the Nuclear-Recoil Ionization Yield in Silicon at 100 eV

F., Albakry, M.; Alkhatib, I.; Alonso, D.; Amaral, D. W. P.; An, P.; Aralis, T.; Aramaki, T.; J., Arnquist, I.; Ataee, Langroudy, I.; E., Azadbakht,; Banik, S.; Barbeau, P. S.; Bathurst, C.; R., Bhattacharyya,; L., Brink, P.; Bunker, R.; Cabrera, B.; Calkins, R.; A., Cameron, R.; Cartaro, C.; Cerdeño, D. G.; Chang, Y. -Y.; M., Chaudhuri,; Chen, R.; Chott, N.; Cooley, J.; Coombes, H.; Corbett, J.; Cushman, P.; S., Das,; F., De Brienne,; M., Rios,; Dharani, S.; Vacri, M. L. Di; D., Diamond, M.; M., Elwan,; Fascione, E.; Figueroa‐Feliciano, E.; W., Fink, C.; Fouts, K.; Fritts, M.; Gerbier, G.; Germond, R.; Ghaith, M.; R., Golwala, S.; Hall, J.; Hassan, N.; Hedges, S. C.; Hines, B. A.; Hong, Z.; W., Hoppe, E.; Hsu, L.; E., Huber, M.; Iyer, V.; Kashyap, Varchaswi; H., Kelsey, M.; Kubik, A.; A., Kurinsky, N.; Lee, M.; Li, A.; Li, L.; M., Litke,; Liu, J.; Liu, Y.; Loer, B.; Asamar, E. López; Lukens, P.; MacFarlane, D. B.; R., Mahapatra,; Mandic, V.; Mast, N.; Mayer, A. J.; Theenhausen, H. Meyer Zu; Michaud, .; Michielin, E.; N., Mirabolfathi,; Mohanty, B.; Nebolsky, B.; Nelson, J.; Neog, H.; Novati, V.; L., Orrell, J.; D., Osborne, M.; M., Oser, S.; A., Page, W.; S., Pandey,; Partridge, R.; S., Pedreros, D.; L., Perna,; R., Podviianiuk,; Ponce, F.; Poudel, S.; Pradeep, A.; Pyle, M.; Rau, W.; Reid, E.; Ren, R.; Reynolds, T.; Roberts, A.; E., Robinson, A.; Runge, J.; Saab, T.; D., Sadek,; Sadoulet, B.; Saikia, I.; Sander, J.; Sattari, A.; Schmidt, B.; W., Schnee, R.; Scorza, S.; Serfass, B.; S., Poudel, S.; Sincavage, D. J.; P., Sinervo,; Speaks, Z.; Street, J.; Sun, H.; Thasrawala, F. K.; Toback, D.; R., Underwood,; Verma, S.; N., Villano, A.; B., von Krosigk,; L., Watkins, S.; Wen, O.; Williams, Z.; Wilson, M. J.; Winchell, J.; Wykoff, K.; Yellin, S.; A., Young, B.; Yu, T. C.; B., Zatschler,; S., Zatschler,; Zaytsev, A.; Zeolla, A.; Zhang, E.; Zheng, L.; Zheng, Y.; A., Zuniga,

doi:10.1103/physrevlett.131.091801

Cited by 6 publications

(4 citation statements)

References 36 publications

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“…In the case of silicon there is a good agreement with measurements from nuclear recoils from 3 MeV to 500 eV. Lower energies measurements [26] could indicate that quantum corrections for electronic stopping power and straggling may be needed. In plots of figure 3 from [21], is shown the light and charge yield as a function of 𝑓 𝑛 , where in the low energy regime our model predict lower values of 𝑓 𝑛 than the Lindhard model (see plots of 𝑓 𝑛 , light and charge as a function of recoil energy [21]).…”

Section: Discussionsupporting

confidence: 66%

“…This was already observed in Xe for 𝐸 𝑅 < 1 keV and expected for Ar, where future studies and measurements are needed. 2) and data from [9] and [26], (right) electronic stopping power ( Arista ) and measurements from [9], the red curve is the electronic stopping that best fits 𝑓 𝑛 data. Analytical expressions for the central curve and the bands are shown in supplemental material.…”

Section: Discussionmentioning

confidence: 99%

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Recent study and results for ionization efficiency theory in pure materials

Sarkis Mobarak,

Sarkis,

Aguilar

et al. 2024

Proceedings of XVIII International Conference on Topics in Astroparticle and Underground Physics — PoS(TAUP2023)

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Low-energy nuclear recoils induced by elastic neutrino nuclear coherent scattering with nuclei in pure materials have become an important topic of research, in particle physics. We present a detailed model to compute the ionization efficiency for nuclear recoils in silicon (quenching factor) based on original integral equation, which is capable of describing recent measurements at low-energy. We take as case example a silicon based reactor antineutrino experiment and compare the effect of this quenching factor in the calculation of the CE𝜈NS rate with that of other curves that have been previously used. We are going to discuss the universal applicability of this model to other materials, such as noble liquid TPCs, which in recent years have become relevant for neutrino low energy CENS searches. Finally, a general discussion of the different effects that directly account for the conversion of nuclear recoil energy (eV nr ) into electron equivalent energy (eV ee ) in ionization detectors.

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Section: Discussionsupporting

confidence: 66%

Section: Discussionmentioning

confidence: 99%

Recent study and results for ionization efficiency theory in pure materials

Sarkis Mobarak,

Sarkis,

Aguilar

et al. 2024

Proceedings of XVIII International Conference on Topics in Astroparticle and Underground Physics — PoS(TAUP2023)

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“…The number of charge carrier pairs can be estimated by ℎ ≈ / pair using the average energy required to create an − ℎ + pair in the crystal. A measurement of the ionization yield in Si down to ≈ 100 eV with a ∼1 g SuperCDMS prototype HVeV (high-voltage with eV-scale resolution) detector has been published in [4]. The HVeV R&D program also plays an important role in developing and tuning the SuperCDMS Detector Monte-Carlo tools which are based on G 4 and the G4CMP condensed matter physics expansion package.…”

Section: Supercdms Detector Technologymentioning

confidence: 99%

Status and prospects of the SuperCDMS Dark Matter experiment at SNOLAB

Zatschler

2024

Proceedings of XVIII International Conference on Topics in Astroparticle and Underground Physics — PoS(TAUP2023)

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Leading cosmological surveys and models provide strong indications for cold Dark Matter (DM) being one of the major constituents of our Universe. However, direct experimental observation of the hypothesized galactic flux of DM particles streaming through the Earth remains an open quest. Following up on the successful operations at Stanford and Soudan, the SuperCDMS collaboration is currently constructing a generation-2 direct DM search experiment at the SNOLAB underground facility in Sudbury, Canada. The experiment will employ two types of cryogenic Ge and Si detectors capable of detecting sub-keV energy depositions. The unique mix of target substrates and detector technologies allows for a simultaneous study of intrinsic and external backgrounds as well as exploring the DM mass range below 10 GeV/ 2 with world-leading sensitivity. The two detector types are referred to as high voltage (HV) and interleaved Z-dependent ionization and phonon (iZIP) detectors. While the iZIP detectors are able to measure both phonon and ionization signals, which makes it possible to discriminate between nuclear and electronic recoils and to characterize backgrounds, the HV detectors solely measure the phonon signal. By applying a bias voltage on the order of 100 V, the primary ionization signal gets amplified in form of secondary phonons through the Neganov-Trofimov-Luke (NTL) effect yielding a lower energy threshold and excellent energy resolution for low-mass DM searches. In order to extend the sensitivity to lower energy deposition thresholds, a precise understanding of the detector response down to the semiconductor bandgap energy of O(eV) is required. This effort is driven by a comprehensive detector testing program of SuperCDMS prototype devices at various test facilities and the development of a sophisticated Detector Monte-Carlo to guide the data analysis and model building. The current status and prospects towards science operation with SuperCDMS at SNOLAB will be reviewed in this article.

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“…Semiconductor targets, such as silicon or germanium, can be utilized as cryogenic solidstate ionization detectors, where sensitivity to single electron ionization events has been demonstrated [67][68][69], corresponding to nuclear recoil energy detection threshold of  10 ( ) eV. The ionization threshold is the minimum energy to create a single electron-hole pair excitation via nuclear recoil interaction.…”

Section: Introductionmentioning

confidence: 99%

Daily and annual modulation rate of low mass dark matter in silicon detectors

Dinmohammadi,

Heikinheimo,

Mirabolfathi

et al. 2024

J. Phys. G: Nucl. Part. Phys.

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Low-threshold solid-state detectors with single electron excitation sensitivity can probe nuclear recoil energies in the sub-100 eV range, coinciding with the typical threshold displacement energies in the detector material. We investigate the daily and annual modulation of the observable event rate for dark matter mass ranging from 0.2 to 5 GeV/c^2 in a silicon detector, considering the energy threshold and the direction of the nuclear recoil. The data for the energy threshold is obtained from a molecular dynamics simulation. It is shown that the directional dependence of the threshold energy and the motion of the laboratory result in the modulation of the interaction event rate. We demonstrate silicon’s average annual interaction rate is more considerable than germanium for low-mass dark matter. However, their event rates take a similar trend in large dark matter masses. Thus, silicon can be a reliable target to discriminate low-mass dark matter from backgrounds. We also find 8-hour and 12-hour periodicities in the time series of event rates for silicon detectors due to the 45-degree symmetry in the silicon crystal structure.

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First Measurement of the Nuclear-Recoil Ionization Yield in Silicon at 100 eV

Cited by 6 publications

References 36 publications

Recent study and results for ionization efficiency theory in pure materials

Recent study and results for ionization efficiency theory in pure materials

Status and prospects of the SuperCDMS Dark Matter experiment at SNOLAB

Daily and annual modulation rate of low mass dark matter in silicon detectors

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