First Lateral Contact Probing of 55-&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$\mu$ &lt;/tex-math&gt; &lt;/inline-formula&gt;m Fine Pitch Micro-Bumps

Kim, Chang-Keun; Yoon, Yong-Hoon; Kwon, Dae-Young; Kim, Seunghwan; Yoon, Gun‐Wook; Rhee, Min Woo Daniel; Yun, Jinyeong; Park, Inkyu; Yoon, Jun‐Bo

doi:10.1109/jmems.2018.2868871

Cited by 3 publications

(1 citation statement)

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“…Selective die testing and sorting are mandatory processes, used to check that each chip on the wafer meets good electrical signal transmission standards [9]. In particular, a wafer testing before the bonding process, known as a prebond test, is commonly required to enhance the test yield in 3D WLP [10]. Wafer testing on these advanced packages is more difficult because they have unique, weaker, and more complex interconnect structures than the conventional flat metal electrode on the wafer.…”

Section: Introductionmentioning

confidence: 99%

Design of New Au–NiCo MEMS Vertical Probe for Fine-Pitch Wafer-Level Probing

Choa

2021

Crystals

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As fine-pitch 3D wafer-level packaging becomes more popular in semiconductor industries, wafer-level prebond testing of various interconnect structures has become increasingly challenging. Additionally, improving the current-carrying capacity (CCC) and minimizing damage to the probe and micro-interconnect structures are very important issues in wafer-level testing. In this study, we propose an Au–NiCo MEMS vertical probe with an enhanced CCC to efficiently reduce the damage to the probe and various interconnect structures, including a solder ball, Cu pillar microbump, and TSV. The Au–NiCo probe has an Au layer inside the NiCo and an Au layer outside the surface of the NiCo probe to reduce resistivity and contact stress. The current-carrying capacity, contact stress, and deformation behavior of the probe and various interconnect structures were evaluated using numerical analyses. The Au–NiCo probe had a 150% higher CCC than the conventional NiCo probe. The maximum allowable current capacity of the 5000 µm-long Au–NiCo probe was 750 mA. The Au–NiCo probe exhibited less contact force and stress than the NiCo probe. The Au–NiCo probe also produced less deformation of various interconnect structures. These results indicate that the proposed Au–NiCo probe will be a prospective candidate for advanced wafer-level testing, with better probing efficiency and higher test yield and reliability than the conventional vertical probe.

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Section: Introductionmentioning

confidence: 99%