First demonstration of the gain switching characteristics of an AlGaAs–GaAs V-grooved quantum wire laser

Kim, T.G.; Suzuki, Yoshihiro; Shimiz, M.; Ogura, Mutsuo

doi:10.1016/s0038-1101(99)00164-1

Cited by 3 publications

(2 citation statements)

References 10 publications

(8 reference statements)

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“…Among all of these cross sections, the so called V‐groove quantum wire (VGQWR) has deserved a special attention due to this kind of morphology is naturally obtained by shaping the substrate in which the QWR is deposited. VGQWRs have been obtained by different ways like vapor deposition or chemical beam epitaxy and they have been used to fabricate devices like lasers or gates . This kind of morphology has been the subject of great interest to scientists and technicians because of this, several investigations can be found in the literature.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear terahertz response associated to electronic intersubband transitions in a V-groove quantum wire

Miranda-Pedraza

Ospina

Giraldo-Tobón

2017

Phys. Status Solidi B

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The electron states as well as the nonlinear optical rectification and second and third harmonic generations are investigated in a GaAs‐based V‐groove quantum wire. The single band effective mass Schrödinger equation is solved using the finite element method. The nonlinear optical coefficients were calculated from expressions derived within the compact density matrix method. It is found that this kind of nanostructures can exhibit noticeable nonlinear responses in the domain of the terahertz when the V‐groove is in the open‐wide geometrical configuration.

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Section: Introductionmentioning

confidence: 99%

Nonlinear terahertz response associated to electronic intersubband transitions in a V-groove quantum wire

Miranda-Pedraza

Ospina

Giraldo-Tobón

2017

Phys. Status Solidi B

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“…Such properties make the QWI structures attractive for applications in novel optoelectronic devices. In particular, the higher optical gain and the narrower spectral gain profiles resulted in QWI lasers showing low injection currents (Kim and Ogura 2000), short pulse widths (Kim et al 1999b), reduced temperature sensitivity, higher modulation speed and narrower spectral linewidths Yariv 1986, Kapon 1992). Crystal growth techniquessuch as molecular beam epitaxy (MBE) or metal-organic vapour phase epitaxy (MOVPE)-enable the deposition of ultra-thin layer structures with well-defined interfaces which show confinement in one dimension.…”

Section: Introductionmentioning

confidence: 99%

Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques

et al. 2001

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Different types of InGaAs/GaAs deep-etched quantum wire (QWI) structure were successfully fabricated by high-energy electron beam lithography on GaAs(100) surfaces. A selective wet-chemical-etching technique, preceded by chemically assisted ion-beam etching, reduced the controlled lateral dimensions of the wires to ~10 nm due to strong under-etching. Various types of wire in the [011̄] and [011] crystallographic directions were prepared by the combined etching method. The side-walls of the wires were defined by the selectively etched low-index crystallographic planes. A molecular-beam-epitaxy-grown graded InGaAs/GaAs quantum well was realized at the narrow `neck' region of the wires, thus providing the strongest possible lateral confinement of the QWI structure. Consequently, similarly to the selective growth of self-narrowing ridge structures, selective wet-chemical etching induced a controlled self-narrowing of the wire structures. Scanning electron microscopy images of the QWI nanostructures showed smooth side-walls defined by the crystallographic planes. Low-excitation photoluminescence spectroscopy of the structures revealed extremely high quantum efficiency and a size-dependent blue shift as a result of the strong lateral confinement.

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Strategies of Nanoscale Semiconductor Lasers

Mao

2007

Nanotechnology for Electronic Materials and Devices

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First demonstration of the gain switching characteristics of an AlGaAs–GaAs V-grooved quantum wire laser

Cited by 3 publications

References 10 publications

Nonlinear terahertz response associated to electronic intersubband transitions in a V-groove quantum wire

Nonlinear terahertz response associated to electronic intersubband transitions in a V-groove quantum wire

Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques

Strategies of Nanoscale Semiconductor Lasers

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