First demonstration of Sn diffusion into gallium oxide from poly-tetraallyl tin deposited by initiated chemical vapor deposition by thermal treatment
In Su Park,
Dahee Seo,
Jongsu Baek
et al.
Abstract:Gallium oxide (Ga2O3) is attracting attention as a next-generation semiconductor material for power device because it has a
wide energy band gap and high breakdown electric field. We deposited a Sn polymer, poly-tetraallyl tin (pTASn), on Ga2O3
samples using a disclosed chemical vapor deposition (iCVD) process. The Sn dopant of the Sn polymer layer is injected into
the Ga2O3 through a heat treatment process. Diffusion model of Sn into the Ga2O3 is proposed through secondary ion mass&… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.