First demonstration of logic mapping on nonvolatile programmable cell using complementary atom switch

Miyamura, Miharu; Tada, Munehiro; Sakamoto, Toshitsugu; Banno, Naoki; Okamoto, K.; Iguchi, N.; Hada, H.

doi:10.1109/iedm.2012.6479020

Cited by 40 publications

(31 citation statements)

References 3 publications

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“…In 2011, Miyamura et al [75] implemented a test chip with a 32 Â 32 crossbar switch based on CBRAM on top of 90-nm CMOS; a 72% reduction in chip area was obtained compared with a standard SRAM-based design. A year later, Miyamura et al [76] demonstrated a test chip based on CBRAM devices on top of 65-nm CMOS. The chip had 3 Â 3 programmable blocks, which were essentially tiles in terms of FPGAs.…”

Section: B Implementationsmentioning

confidence: 98%

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Monolithic 3-D FPGAs

et al. 2015

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| This paper reviews the recent developments in monolithic 3-D field-programmable gate arrays (FPGAs). Enabling technologies are covered. Three representative groups of monolithic 3-D FPGAs are discussed: ''normally off, instantly on'' FPGAs, FPGAs with 3-D switches, and FPGAs with 3-D configuration memory and pass transistors. The circuit designs and implementations of each group are presented and examined.

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Section: B Implementationsmentioning

confidence: 98%

“…(a) Schematic diagram of a programmable block[76] consisting of two four-input LUTs linked with the vertical and horizontal wire via input/output crossbars. (b) Schematic of the output crossbar array, which has two wires for each direction: top, down, right, and left.…”

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confidence: 99%

Monolithic 3-D FPGAs

et al. 2015

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“…Since the SRAMs and pass-transistors occupy a large area Manuscript in the front end of line, the chip size is increased. On the other hand, the CAS can be embedded in the back end of line (BEOL) as a crossbar switch, resulting in a small chip size with 75% area reduction [5], [6]. Reduction of the capacitance in the routing path due to a shortened wire length and smaller capacitance of the CAS contributes to 61% reduction in active power consumption.…”

Section: Introductionmentioning

confidence: 99%

Cu Atom Switch With Steep Time-to-ON-State Versus Switching Voltage Using Cu Ionization Control

Banno

Tada

Sakamoto

et al. 2015

IEEE Trans. Electron Devices

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To break the tradeoff relationship between fast and low-voltage programming of a Cu atom switch, the effect of the composition in the AlTi oxide buffer layer placed on a Cu electrode is investigated. To improve the voltage dependence of time-to-ON-state, namely, switching slope (SS), the Cu ionization rate is increased by changing the composition ratio of the AlTi oxide buffer. An Al 0.5 Ti 0.5 O y buffer leads to an extremely steep SS of 56 mV/decade by eliminating metallic Al residue on the Cu electrode. This buffer enables fast (10 ns) and lowvoltage (∼2 V) programming, as demonstrated in a 1-Mbit array. Cycle endurance (>10 3 cycles) with a high ON/ OFF resistance ratio (>10 4 ) was also confirmed. The steep SS technology is indispensable for conducting bridges used in a low-power nonvolatile field-programmable gate array.Index Terms-Atom switch, electrochemical reaction, fieldprogrammable gate array (FPGA), nonvolatile memory, polymer, reconfigurable logic, solid electrolyte.

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“…Programming scheme of the DCAS, and IV characteristics of I ds and I gs in both of the on-and off-states[10].…”

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confidence: 99%

(Invited) Atom Switch Technology for Low-Power Nonvolatile Logic Application

et al. 2014

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This paper reports Atom switch technology featuring Cu nanometer-scale conducting bridge in a solid-electrolyte. The switch exhibits resistance-switching, which is originated from Cu electrolysis through the solid-electrolyte. Three types of device structure of Atom switches such as two-terminal device, CAS and DCAS are reviewed with the object of the routing switch application to directly replace the conventional CMOS switch element, realizing the low-power, nonvolatile programmable logic.

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First demonstration of logic mapping on nonvolatile programmable cell using complementary atom switch

Cited by 40 publications

References 3 publications

Monolithic 3-D FPGAs

Monolithic 3-D FPGAs

Cu Atom Switch With Steep Time-to-ON-State Versus Switching Voltage Using Cu Ionization Control

(Invited) Atom Switch Technology for Low-Power Nonvolatile Logic Application

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