First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes

Yang, C.-Y.; Sung, Po-Jung; Chuang, Min-Te; Chang, Chih‐Han; Shih, Yen-Te; Huang, Ti Ying; Lu, Darsen D.; Hong, Tzu-Chieh; Yu, Xueyang; Lu, Wen-Hsiang; Chang, S. W.; Tsai, Jia-Lun; Huang, Min-Wei; Cho, T.-C.; Lee, Y.-J.; Luo, K.-L.; Wu, Chien-Ting; Su, Chun Jung; Kao, Kuo-Hsing; Chao, Tien Sheng; Wu, Wen−Fa; Wang, Y.-H.

doi:10.1109/iedm45625.2022.10019487

2022 International Electron Devices Meeting (IEDM) 2022

DOI: 10.1109/iedm45625.2022.10019487

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First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes

C.-Y. Yang

Po-Jung Sung

Min-Te Chuang

et al.

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First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes

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