First Demonstration of BEOL-Compatible Ultrathin AtomicLayer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability

Zheng, Dongqi; Charnas, Adam; Anderson, Jackson; Dou, Hongyi; Hu, Zheng; Lin, Zehao; Zhang, Z.; Zhang, Jianyue; Liao, Pai-Ying; Si, Mengwei; Wang, H.; Weinstein, Dana; Ye, P. D.

doi:10.1109/iedm45625.2022.10019452

Cited by 15 publications

(7 citation statements)

References 8 publications

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“…These oxygen vacancies act as shallow donors, and prefer to exist in V o +2 form, which is located at the edge or inside the conduction band. 8,9 The donor like traps generation model can explain the negative V th shift during the PBTS case, as shown in Fig. 3.…”

Section: Resultsmentioning

confidence: 95%

“…[1][2][3] Beyond its primary role within the display field, a-IGZO-TFTs have gained significant attention due to their potential integration into electronic system, which are compatible with both CMOS and back-end-of-line (BEOL) technologies, making them an appropriate choice for the electronics application. [4][5][6][7][8][9] In addition, it also has potential applications in the field of three-dimensional (3D) integrated nanoelectronics and internet of things (IoT). These applications demand high-density and high-performance devices.…”

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confidence: 99%

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Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Aslam,

Chang,

Chen

et al. 2024

ECS J. Solid State Sci. Technol.

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Amorphous indium gallium zinc oxide (a-IGZO) has recently made significant advancement as a key material for electronic component design owing to its compatibility with complementary metal oxide semiconductor technologies. A comprehensive analysis of reliability-related issues is required to determine the true potential of a-IGZO-based devices for next-generation electronics applications. To address this objective, we electrically characterize scaled-channel a-IGZO thin film transistors (TFTs) under positive bias (temperature) stress (PB(T)S). Both PBS and PBTS are characterized by positive and negative Vth shift, respectively, during the various gate stresses. In particular, the negative Vth shift is explained by the generation of donor-like traps stimulated by ionization of oxygen vacancy/hydrogen at elevated temperature. The TFTs exhibit relatively decent stability during the PBS operation. The analysis of devices with variant channel dimensions implies that long-channel devices exhibit relatively higher stability and performance compared to the short-channel ones. We also observe that the Vth can be controllably adjusted by employing the top gate (TG) with bottom gate sweep. Moreover, the stress-induced partial recovery mechanism is experimentally observed owing to detrapping of charges. Generally, the reported results infer a perceptive understanding of scaled-channel a-IGZO-TFTs which helps with shaping performance-enhancement strategies.

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Section: Resultsmentioning

confidence: 95%

mentioning

confidence: 99%

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Aslam,

Chang,

Chen

et al. 2024

ECS J. Solid State Sci. Technol.

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“…Indium gallium oxide (IGO) TFTs fabricated in a similar process without further treatment show excellent room‐temperature PBI resilience with just a −45 mV shift over 2000 s of stress at a logic‐relevant +1 V gate bias. [ 133 ] Indium zinc oxide (IZO) TFTs with a 1:1 In:Zn stoichiometric ratio have been shown to offer exceptionally good PBI resistance, with essentially zero V T shift measured after 1500 s of +3 V gate stress, repeatable across many devices, [ 134 ] as shown in Figure 9d.…”

Section: Resultsmentioning

confidence: 99%

Review—Extremely Thin Amorphous Indium Oxide Transistors

Charnas,

Zhang,

Lin

et al. 2023

Advanced Materials

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Amorphous oxide semiconductor transistors have been a mature technology in display panels for upwards of a decade, and have recently been considered as promising back‐end‐of‐line (BEOL) compatible channel materials for monolithic 3D applications. However, achieving high‐mobility amorphous semiconductor materials with comparable performance to traditional crystalline semiconductors has been a long‐standing problem. Recently it has been found that greatly reducing the thickness of indium oxide, enabled by an atomic layer deposition (ALD) process, can tune its material properties to achieve high mobility, high drive current, high on/off ratio, and enhancement‐mode operation at the same time, beyond the capabilities of conventional oxide semiconductor materials. In this work, we review the history leading to the re‐emergence of indium oxide, its fundamental material properties, growth techniques with a focus on ALD, state‐of‐the‐art indium oxide device research, and the bias stability of the devices.This article is protected by copyright. All rights reserved

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“…Amorphous oxide thin-film transistors (TFTs) have been adopted as a building unit in high-resolution active-matrix organic light-emitting diode (AMOLED) backplanes (B/Ps) due to their reasonable field-effect mobility (μ FE ) of ∼30 cm 2 /(V s), excellent current modulation ratio, steep switching, low-temperature fabrication, and large area uniformity. , Recently, next-generation electronic devices using augmented/virtual/extended reality (AR/VR/XR) technology have been spotlighted, which require a refresh rate and an ultrahigh resolution greater than 120 Hz and 2000 pixels per inch (ppi), respectively. − Furthermore, the cutting-edge technology demands faster gate selection than the conventional large-size AMOLED devices, which makes it difficult to apply oxide TFTs into them. For this reason, the B/Ps of mobile AMOLED displays have mainly utilized low-temperature polycrystalline silicon (LTPS) with high μ FE of >80 cm 2 /(V s).…”

Section: Introductionmentioning

confidence: 99%

Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors

Kim,

Bang

et al. 2024

ACS Appl. Mater. Interfaces

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Drain-induced barrier lowering (DIBL) is one of the most critical obstacles degrading the reliability of integrated circuits based on miniaturized transistors. Here, the effect of a crystallographic structure change in InGaO [indium gallium oxide (IGO)] thin-films on the DIBL was investigated. Preferentially oriented IGO (po-IGO) thin-film transistors (TFTs) have outstanding device performances with a field-effect mobility of 81.9 ± 1.3 cm 2 /(V s), a threshold voltage (V TH ) of 0.07 ± 0.03 V, a subthreshold swing of 127 ± 2.0 mV/dec, and a current modulation ratio of (2.9 ± 0.2) × 10 11 . They also exhibit highly reliable electrical characteristics with a negligible V TH shift of +0.09 (−0.14) V under +2 (−2) MV/cm and 60 °C for 3600 s. More importantly, they reveal strong immunity to the DIBL of 17.5 ± 1.2 mV/V, while random polycrystalline In 2 O 3 (rp-In 2 O 3 ) and IGO (rp-IGO) TFTs show DIBL values of 197 ± 5.3 and 46.4 ± 1.2 mV/V, respectively. This is quite interesting because the rp-and po-IGO thin-films have the same cation composition ratio (In/Ga = 8:2). Given that the lateral diffusion of oxygen vacancies from the source/drain junction to the channel region via grain boundaries can reduce the effective length (L eff ) of the oxide channel, this improved immunity could be attributed to suppressed lateral diffusion by preferential growth. In practice, the po-IGO TFTs have a longer L eff than the rp-In 2 O 3 and -IGO TFTs even with the same patterned length. The effect of the crystallographic-structure-dependent L eff variation on the DIBL was corroborated by technological computer-aided design simulation. This work suggests that the atomic-layer-deposited po-IGO thin-film can be a promising candidate for next-generation electronic devices composed of the miniaturized oxide transistors.

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First Demonstration of BEOL-Compatible Ultrathin AtomicLayer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability

Cited by 15 publications

References 8 publications

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Review—Extremely Thin Amorphous Indium Oxide Transistors

Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors

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