First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET

Gupta, Chirag; Chan, Silvia H.; Agarwal, Anchal; Hatui, Nirupam; Keller, S.; Mishra, Umesh K.

doi:10.1109/led.2017.2756926

Cited by 43 publications

(42 citation statements)

References 24 publications

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“…In the Al 2 O 3 deposition, an interlayer usually forms at the interface between the oxide and substrate and the Si addition to Al oxide improves the interface quality [9,10]. In this respect, the compensation created by the addition of silicon to Al x O y films [9,10,13] Fig. 9 for the different samples.…”

Section: Optical and Electrical Propertiesmentioning

confidence: 99%

“…The Maxwell-Wagner theory of a two-layer condenser [30] describes the interfacial space-charge polarization, which occurs at the interface of two contacting slabs of frequency-independent materials with significantly different conductivities and static dielectric constants. In the Al 2 O 3 deposition, an interlayer usually forms at the interface between the oxide and substrate and the Si addition to Al oxide improves the interface quality [9,10]. In this respect, the compensation created by the addition of silicon to Al x O y films [9,10,13] Fig.…”

Section: Optical and Electrical Propertiesmentioning

confidence: 99%

“…Using Al 1-x Si x O y instead of SiO 2 or Al 2 O 3 enables to have a combination between the properties of SiO 2 and Al 2 O 3 , which may improve the fracture toughness, corrosion and oxidation resistance. Also, silicon addition to Al 2 O 3 films provides an optimal combination of breakdown field strength, band offset and dielectric constant [10]. Moreover, Al 2 O 3 film defects, which result from the deviation of stoichiometry of Al and O atoms during the deposition, can be compensated by the addition of silicon to Al x O y films.…”

Section: Introductionmentioning

confidence: 99%

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Influence of Al/Si atomic ratio on optical and electrical properties of magnetron sputtered Al1-xSixOy coatings

AL-Rjoub

Rebouta

Manninen³

et al. 2019

Thin Solid Films

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This work presents a study on the influence of the Al/Si atomic ratio in dc magnetron sputtered Al 1-x Si x O y amorphous and transparent films upon their chemical composition, films' structure, optical and electrical properties. Increasing silicon in Al 1-x Si x O y films, from 0 at. % up to 31.1 at. %, caused an increment of deposition rate and an increment in Al-O-Si energy bonds as confirmed by XPS analysis. On other hand, the optical constants (refractive index (n) and extinction coefficient (k)), dielectric constant, loss tangent (tan δ) and ac conductivity (σ ac) decrease when the amount of silicon in films increased. The results show that refractive index varies linearly with volume % of Al 2 O 3 (or SiO 2). Dielectric constant and dielectric loss evidenced two dipolar contributions, attributed to defects located one at or near the substrate/oxide interface, and the other in the bulk of the oxide.

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Section: Optical and Electrical Propertiesmentioning

confidence: 99%

Section: Optical and Electrical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of Al/Si atomic ratio on optical and electrical properties of magnetron sputtered Al1-xSixOy coatings

AL-Rjoub

Rebouta

Manninen³

et al. 2019

Thin Solid Films

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“…The in situ growth of Al 2 O 3 on both Ga-face and N-face GaN has been studied extensively using MOCVD. [22][23][24][25][26] In this paper, we demonstrate for the first time in situ growth of Al 2 O 3 using MOCVD and High quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. This paper reports the in situ metal-organic chemical vapor deposition of Al 2 O 3 on β-Ga 2 O 3 as a potentially better alternative to the most commonly used atomic layer deposition (ALD).…”

mentioning

confidence: 92%

In Situ Dielectric Al₂O₃/β‐Ga₂O₃ Interfaces Grown Using Metal–Organic Chemical Vapor Deposition

Roy

Chmielewski

Bhattacharyya

et al. 2021

Adv Elect Materials

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as the gate dielectric for device applications. For transistor applications, a gate dielectric should exhibit low leakage currents, have low interface trap densities to achieve a controllable threshold voltage (V T ), and should also have a higher breakdown field compared to the underlying semiconductor. Many insulators such as SiO 2 , [3][4][5][6] Al 2 O 3 , [7,8] SiN, [9] and HfO 2 [9,10] have been studied as a gate oxide material and passivation layers for gallium oxide devices. Extreme permittivity materials such as barium titanate (BaTiO 3 ) were also studied and used as dielectric material in β-Ga 2 O 3 -based transistors and heterojunction Schottky barrier diodes. [11][12][13] Complex oxides such as ternary rare earth alloys (Y 0.6 Sc 0.4 ) 2 O 3 were also investigated by Masten et al. as gate dielectric for β-Ga 2 O 3 -based metal oxide semiconductor (MOS) structures. [14] Among all the dielectric materials, Al 2 O 3 is studied and used most extensively for β-Ga 2 O 3 -based devices due to its compatibility with β-Ga 2 O 3 . Chabak et al. demonstrated various lateral MOSFETs with Al 2 O 3 as gate dielectric showing excellent field strength. [15][16][17] Li et al. also demonstrated β-Ga 2 O 3 -based vertical FinFET structures with outstanding figure of merit (FOM) using Al 2 O 3 as gate dielectric. [18][19][20] Jian et al. studied the effects of PDA on the interface trap density of the ALD deposited Al 2 O 3 on (001) β-Ga 2 O 3 . [21] In all these reported works the deposition of Al 2 O 3 is primarily performed using ex situ technique such as atomic layer deposition (ALD), where after its growth, the gallium oxide substrate or epilayer is taken to a different reactor for dielectric deposition. During such a transfer step, it is hard to completely remove any interface contamination. Using in situ deposition of Al 2 O 3 in the same reactor as the underlying Ga 2 O 3 , the surface of the Ga 2 O 3 can be kept pristine without exposure to the ambient. The quality of the dielectric could also improve due to the high temperature growth by metalorganic chemical vapor deposition (MOCVD) (500 to 1000 °C), compared to ALD (100 to 300 °C). MOCVD also enables high deposition rates, significantly higher than that of the ALD technique. MOCVD reactor can also facilitate high temperature in situ annealing which can reduce the dielectric/semiconductor interface state density as well as improve the bulk dielectric quality. The in situ growth of Al 2 O 3 on both Ga-face and N-face GaN has been studied extensively using MOCVD. [22][23][24][25][26] In this paper, we demonstrate for the first time in situ growth of Al 2 O 3 using MOCVD and High quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. This paper reports the in situ metal-organic chemical vapor deposition of Al 2 O 3 on β-Ga 2 O 3 as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al 2 O 3 is performed in the same reactor as Ga 2 O 3 using trimethylaluminum and O 2 a...

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“…Then, trench MOSFETs with a 13 µm drift layer and hexagonal trench gate layout were fabricated, obtaining a threshold voltage of 3.5 V, breakdown voltage of 1250 V, specific onresistance of 1.8 m •cm 2 , and power figure of merit (FOM) of 0.868 GW/cm 2 as shown in TABLE 1 [4]. In situ oxide, GaN interlayer-based vertical trench MOSFET (OG-FET) has been proposed to enhance the channel electron mobility and reduce on resistance [5]- [12]. For OG-FET, the breakdown voltage was increased to 1435 V by utilizing novel double field-plated structure.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs

et al. 2020

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In this work, device parameters for GaN vertical trench MOSFETs have been investigated systematically to further improve the device characteristics. The n − GaN drift layer, the p + GaN layer and the trench gate are designed and optimized systematically using Silvaco ATLAS 2-D simulation, in order to get the best trade-off between V BR and specific on-resistance R on. Three-terminal breakdown curves, the electron concentration, current density and electric field strength distributions have been presented to analyze the breakdown characteristics. The correlations between different parameters and different initial conditions are considered, and the eight parameters are optimized comprehensively. After the final optimization, record high FOM of 4.8 GW/cm 2 , V BR of 2783 V, average electric field E drift of 1.98 MV/cm and a low R on of 1.6 m •cm 2 are obtained for drift layer thickness of 14 µm. The product of the thickness L p and doping density N p of p + GaN layer can determine the breakdown mechanism, and punch through mechanism would occur when L p • N p is lower than a certain value. The results indicate there exists large optimization room for fabricated GaN vertical trench MOSFETs, and the device characteristics can be further improved through the methodology in this paper for high power and high voltage applications. INDEX TERMS GaN vertical trench MOSFETs, breakdown voltage, specific on-resistance, power figureof-merit (FOM).

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First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET

Cited by 43 publications

References 24 publications

Influence of Al/Si atomic ratio on optical and electrical properties of magnetron sputtered Al1-xSixOy coatings

Influence of Al/Si atomic ratio on optical and electrical properties of magnetron sputtered Al1-xSixOy coatings

In Situ Dielectric Al₂O₃/β‐Ga₂O₃ Interfaces Grown Using Metal–Organic Chemical Vapor Deposition

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs

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First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET

Cited by 43 publications

References 24 publications

Influence of Al/Si atomic ratio on optical and electrical properties of magnetron sputtered Al1-xSixOy coatings

Influence of Al/Si atomic ratio on optical and electrical properties of magnetron sputtered Al1-xSixOy coatings

In Situ Dielectric Al2O3/β‐Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs

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In Situ Dielectric Al₂O₃/β‐Ga₂O₃ Interfaces Grown Using Metal–Organic Chemical Vapor Deposition