First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Rotter, Thomas; Mistele, D.; Stemmer, J.; Seyboth, M.; Schwegler, V.; Paprotta, S.; Fedler, F.; Klausing, H.; Semchinova, O.; Aderhold, J.; Graul, J.

doi:10.1049/el:20010484

Cited by 10 publications

(6 citation statements)

References 3 publications

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“…It was also found that this device cannot be completely turned off even with V g ϭ Ϫ3.5 V. Similar phenomena were also reported by other research groups. 6,9,20 Such an observation indicates that there exists a source-to-drain (S-D) leakage path in our AlGaN/ GaN MOSHFET. We believe such a large S-D leakage current originated from the 2-m-thick, unintentionally doped GaN layer.…”

Section: Characteristics Of Algan/gan Metal-oxide Semiconductor Hetermentioning

confidence: 84%

AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

Wang

Chiou

Chang

et al. 2003

Journal of Elec Materi

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High-quality SiO 2 was successfully deposited onto GaN by photo-chemicalvapor deposition (photo-CVD) using a D 2 lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect transistors (MOSHFETs) were also fabricated with photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, we found that we could reduce the gate-leakage current by more than four orders of magnitude by inserting the photo-CVD oxide layer in between the AlGaN/GaN and the gate metal. With a 2-m gate, it was found that the saturated I ds , maximum g m , and gate-voltage swing (GVS) of the fabricated nitride-based MOSHFET were 512 mA/mm, 90.7 mS/mm, and 6 V, respectively.

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Section: Characteristics Of Algan/gan Metal-oxide Semiconductor Hetermentioning

confidence: 84%

AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

Wang

Chiou

Chang

et al. 2003

Journal of Elec Materi

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“…44 This is necessary to prevent dissolution of the relatively reactive oxide layer. Alternatively, the work of Rotter et el [38][39][40] on GaN and AlGaN suggests that (photo)anodic oxidation might be an interesting approach to making dielectric oxide on SiC (possibly with a low density of interface states) for device applications.…”

Section: Discussionmentioning

confidence: 99%

“…That gas molecules can be transported through a compact oxide is shown in work on group III-nitrides. Rotter and co-workers produced a gate dielectric for MOSFET devices by photoanodic oxidation of part of a 30 nm layer of n-type Al 0.2 Ga 0.8 N in dilute alkaline solution. − This is a 3-hole reaction and N 2 has to be released. This group has shown that thick oxide (up to 1.2 μm) can be grown on n-type GaN under comparable conditions .…”

Section: Discussionmentioning

confidence: 99%

Electrochemical Growth of Micrometer-Thick Oxide on SiC in Acidic Fluoride Solution

et al. 2009

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Anodic polarization of SiC at modest potential in dilute fluoride solution of pH 3 surprisingly gives rise to the growth of micrometer-thick surface layers, clearly revealed with scanning electron microscopy. The reaction occurs at p-type SiC in the dark and at n-type SiC under (supra)bandgap illumination. The surface layer was shown by Rutherford backscattering spectrometry (RBS) to consist of silicon dioxide and to contain excess oxygen. Elastic recoil detection (ERD) indicated only a low level of carbon and fluoride in the layer but a considerable content of hydrogen. The growth kinetics was characterized in situ by spectroscopic ellipsometry and electrical impedance spectroscopy. The results suggest the formation of a duplex layer: a thin inner dielectric oxide and a thick hydrated outer oxide. The latter must have a considerable degree of porosity to allow diffusion/migration of reactants and products during oxide growth.

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“…With this technology, we could fabricate the first AlGaN/GaNbased MOSHFET with the quasi-native growth of a dielectric. 27 Pure PEC-Al x Ga 2-x O 3 MOSHFETs show a reduced threshold voltage ƒV th ƒ , but a similar or enhanced I Dmax current compared to HFETs. On the first set of samples, the threshold voltages, V th ϭ Ϫ4.5 V for the PEC MOSHFETs, are lower than that of the HFET processed on the same wafer with V th ϭ Ϫ9 V. This behavior is attributed to the consumption of some amount of the AlGaN-barrier layer during the PEC oxidation and the relatively high staticdielectric constant of Al x Ga 2-x N (Table I).…”

Section: Photoelectrochemical-al X Ga 2-x O 3 Metal-oxide Semiconductmentioning

confidence: 99%

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

Mistele

Rotter

Horn

et al. 2003

Journal of Elec Materi

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Dielectric layers within III-nitride transistor technology can act either as passivation layers or as gate-dielectric layers. In this paper, we reflect on both issues and present novel approaches of dielectric schemes. In both cases, the elimination of surface traps or, more generally, of surface states is a key issue in obtaining improved device performance. As gate dielectrics, we introduced and investigated thermally and photoelectrochemically generated Al x Ga 2-x O 3 , SiO 2 , the combination of Al x Ga 2-x O 3 and SiO 2 (tandem-dielectric stack), and e-beam-deposited Al 2 O 3 . These dielectric layers serve simultaneously as a passivation layer. In addition, we introduced plasma-enhanced chemical-vapor deposition (PECVD)-deposited SiN x for passivation. The results highlight the importance of passivation and the introduction of gate dielectrics and emphasize the relationship between surface states and improved direct-current (DC) performance. Backed by additional measurements, we propose a different gateleakage mechanism for heterostructure field-effect transistor (HFET) and metal-oxide semiconductor heterostructure field-effect transistor (MOSHFET) devices.

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First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Cited by 10 publications

References 3 publications

AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

Electrochemical Growth of Micrometer-Thick Oxide on SiC in Acidic Fluoride Solution

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

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