Firing Performance of Microchip Exploding Foil Initiator Triggered by Metal-Oxide-Semiconductor Controlled Thyristor

Wang, Ke; Zhu, Peng; Xu, Cong; Zhang, Qiu; Yang, Zhi; Shen, Ruiqi

doi:10.3390/mi11060550

Cited by 10 publications

(4 citation statements)

References 29 publications

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“…Numerous studies have been conducted to optimize the performance [1][2][3][4]. Since 1980s, Sandia National Laboratories have been engaged in the improvement of EFI [5], when new technologies including microelectromechanical systems (MEMS) and low temperature cofired ceramics (LTCC) were applied to the preparation, whose system volume has been greatly compressed to about 0.97~1.76 cm 3 [1].…”

Section: Introductionmentioning

confidence: 99%

Theoretical low-energy design of exploding foil initiator

Wang,

Zeng,

2024

MATEC Web Conf.

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In order to promote the development of miniaturization, low-energy and integration of exploding foil initiator, its low-energy design, preparation and tests were studied. It is expected to control the initiation voltage less than 1000 V. Based on the mechanism of bridge electrical explosion and driving flyer, the performance of exploding foil initiator at different parameters of bridge, flyer and barrel was calculated, which indicates an optimal matching relationship among component parameters as the bridge size of 0.2×0.2×0.006 mm, the flyer thickness of 12~22 μm and the barrel hole size of Ф 0.3×200~350 μm.

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Section: Introductionmentioning

confidence: 99%

Theoretical low-energy design of exploding foil initiator

Wang,

Zeng,

2024

MATEC Web Conf.

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“…In recent years, the application of Metal Oxide Semiconductor Controlled Thyristor (MCT) in CDU has been reported. Wang K et al [1] made a CDU based on the MCT switch. The average inductance and resistance of the CDU are 22.07nH and 72.55 mΩ, respectively.…”

Section: Introductionmentioning

confidence: 99%

Variable mechanism of electrical impedance for MCT high voltage switch under synergetic action of the mechanical and electric loads

Chen,

Guo,

Guo

et al. 2023

Phys. Scr.

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To study the electromechanical coupling effect of Metal Oxide Semiconductor Controlled Thyristor (MCT) high voltage switch under the synergistic action of mechanical load and strong voltage in the actual use of penetrating hard targets and launching, the universal testing machine was used to simulate the overload environment. The rising edge time, falling time and impedance changes in the conduction path of MCT under different stress–strain were tested, respectively. Experimental results showed that the rise time of MCT decreased from 0.08 ms to 0.03 ms when the uniaxial compressive stress increased from 1.20 MPa to 7.3 MPa, and the rising edge time after unloading was 0.04 ms. The falling time had no obvious change with the increase of stress. The total resistance in the path decreased from 833.30 Ω to 564.22 Ω with the increase of strain. The stress–strain of each part of MCT under different uniaxial compressive stress was collected by COMSOL Multiphysics finite element software. Based on the Schrödinger equation, the potential energy operator was established. By introducing the strain Hamiltonian H ε,ν , the E(k)-k model near the minimum value of the conduction band of Si was established by using the k·p perturbation method. Combined with the physical field interface of Schrödinger equation in COMSOL Multiphysics, the valence band structure of Si material under uniaxial strain was studied on the basis of strain Hamiltonian perturbation. The results showed that the 6-degree degenerate valley (Δ6) in the conduction band was split into a 2-degree degenerate valley (Δ2) and a 4-degree degenerate valley (Δ4) due to the stress effect. The strain caused more electrons to occupy the lower Δ4 energy valley, resulting in a decrease in the effective mass of the total conductivity. Therefore, the electron mobility of Si was increased under uniaxial strain. The uniaxial compressive stress could more effectively reduce the curvature radius of valence band top, the effective mass of carriers and the interband scattering between light and heavy hole bands, which was beneficial to improve the hole mobility.

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“…Magnetron sputtering and photolithography are commonly employed processes for fabricating blast foil transducer elements [8][9][10]. During the fabrication of metal bridge foils, various defects of different shapes and depths such as blind holes, through-holes, and scratches can arise on the surface of the exploded foil transducer element due to factors such as holes, pits, burrs, foreign particulate matter, and target droplets on the substrate surface [11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Impact of Through-Hole Defects on the Electro-Explosive Properties of Exploding Foil Transducers

Wang¹,

Wang

et al. 2023

Micromachines

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This study examines the impact of surface defects on the electro-explosive properties of metal explosive foil transducers. Specifically, it focuses on the effects of defects in the bridge foil and their influence on the electrical explosion time and transduction efficiency. To analyze these effects, a current-voltage simulation model is developed to simulate the behavior of a defective bridge foil. The simulation results are validated through experimental current-voltage measurements at both ends of the bridge area. The findings reveal that the presence of through-hole defects on the surface of the bridge foil leads to an advancement in the electrical explosion time and a reduction in the transduction efficiency of the bridge foil. A performance comparison is made between the defective bridge foil and a defect-free copper foil. As observed, a through-hole defect with a radius of 20 μm results in a 1 ns advance in the blast time and a 1.52% decrease in energy conversion efficiency. Similarly, a through-hole defect with a radius of 50 μm causes a 51 ns advancement in the blast time and a 13.96% reduction in the energy conversion efficiency. These findings underscore the detrimental effects of surface defects on the electro-explosive properties, emphasizing the importance of minimizing defects to enhance their performance.

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Firing Performance of Microchip Exploding Foil Initiator Triggered by Metal-Oxide-Semiconductor Controlled Thyristor

Cited by 10 publications

References 29 publications

Theoretical low-energy design of exploding foil initiator

Theoretical low-energy design of exploding foil initiator

Variable mechanism of electrical impedance for MCT high voltage switch under synergetic action of the mechanical and electric loads

Impact of Through-Hole Defects on the Electro-Explosive Properties of Exploding Foil Transducers

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