Finite Silicon Atom Diffusion Induced Size Limitation on Self-Assembled Silicon Quantum Dots in Silicon-Rich Silicon Carbide

Lin, Gong‐Ru; Lo, Tzu-Chieh; Tsai, Ling-Hsuan; Pai, Yi‐Hao; Cheng, Chih-Hsien; Wu, Chih-I; Wang, Po-Sheng

doi:10.1149/2.014202jes

Cited by 36 publications

(19 citation statements)

References 30 publications

(43 reference statements)

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“…The composition ratio of N/Si is determined as 1.02. For the SiO x film, the Si 2p line and the O 1s line are located at 106.3 and 536 eV, respectively [31]. The composition ratio is determined as 1.55.…”

Section: Methodsmentioning

confidence: 99%

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Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

Tai¹,

Lin²

2013

IEEE Photonics J.

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Yellow electroluminescence (EL) of a 20-pair Si-rich SiN x /SiO x superlattice is demonstrated by plasma-enhanced chemical vapor deposition (PECVD) and annealing process. After annealing at 900 C for 30 min, two photoluminescence (PL) peaks at 480 and 570 nm are observed to blue-shift the PL wavelength, and the corresponding peak intensity is enhanced due to the self-aggregation of Si quantum dots (QDs). When increasing the annealing temperature to 1050 C, the PL peaks caused by the aggregated Si-QDs in SiN x and SiO x layers red-shift to 500 and 600 nm, thereby shifting the PL peak wavelength to 520 nm. Such a wavelength red-shifting phenomenon is mainly attributed to the formation of large Si-QDs due to the Ostwald ripening effect. The turn-on voltage and the V -I slope of the ITO/SiN x /SiO x /p-Si/Al LED device are 200 V and 15.5 kV/mA with FowlerNordheim (FN) tunneling assistant carrier transport under an effective barrier height of 1.3 eV. Maximum output-power-current slope of 0.2 W/A at power conversion efficiency of 10 À6 is detected.

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Section: Methodsmentioning

confidence: 99%

“…The composition ratios of SiN x and SiO x films remain unchanged after annealing process. According to the theoretical model, the composition ratios of SiN x and SiO x films determine the diffusion coefficient, which significantly affect the sizes of Si-QDs [31]. The excessive Si atoms self-aggregate into Si-QDs after annealing process.…”

Section: Methodsmentioning

confidence: 99%

Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

Tai¹,

Lin²

2013

IEEE Photonics J.

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“…Tohmon et al claimed that the PL of NOV defects in oxygendeficient high-purity silica glass at 459 nm [80]. The blue PL for NOV defects not only in the Si- In contrast to SiO x , either SiN x or SiC x is also considered as host matrix to confine the Si-QDs [63][64][65][66][67][68][69][70][71][72][73][74][75][76]. In 1992, Chen et al utilized the PECVD and Ar + -laser annealing to fabricate the Si:H/SiN x :H multiple quantum well (MQW).…”

Section: Photoluminescence Of Si-qdmentioning

confidence: 99%

“…In contrast to SiO x , either SiN x or SiC x is also considered as host matrix to confine the Si-QDs [ 63 , 64 , 65 , 66 , 67 , 68 , 69 , 70 , 71 , 72 , 73 , 74 , 75 , 76 ]. In 1992, Chen et al utilized the PECVD and Ar + -laser annealing to fabricate the Si:H/SiN x :H multiple quantum well (MQW).…”

Section: Photoluminescence Of Si-qdmentioning

confidence: 99%

Si-QD Synthesis for Visible Light Emission, Color Conversion, and Optical Switching

Cheng

Lin

2020

Materials

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This paper reviews the developing progress on the synthesis of the silicon quantum dots (Si-QDs) via the different methods including electrochemical porous Si, Si ion implantation, and plasma enhanced chemical vapor deposition (PECVD), and exploring their featured applications for light emitting diode (LED), color-converted phosphors, and waveguide switching devices. The characteristic parameters of Si-QD LED via different syntheses are summarized for discussion. At first, the photoluminescence spectra of Si-QD and accompanied defects are analyzed to distinguish from each other. Next, the synthesis of porous Si and the performances of porous Si LED reported from different previous works are compared in detail. Later on, the Si-QD implantation in silicide (SiX) dielectric films developed to solve the instability of porous Si and their electroluminescent performances are also summarized for realizing the effect of host matrix to increase the emission quantum efficiency. As the Si-ion implantation still generates numerous defects in host matrix owing to physical bombardment, the PECVD method has emerged as the main-stream methodology for synthesizing Si-QD in SiX semiconductor or dielectric layer. This method effectively suppresses the structural matrix imperfection so as to enhance the external quantum efficiency of the Si-QD LED. With mature synthesis technology, Si-QD has been comprehensively utilized not only for visible light emission but also for color conversion and optical switching applications in future academia and industry.

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“…The Si-rich SiC x film was deposited on SiO 2 covered Si substrate by using the plasma-enhanced chemical vapor deposition (PECVD) system with reactive gaseous recipe of argon diluted silane (8% SiH 4 +92% Ar) and methane (CH 4 ) [33]. During synthesis, the substrate temperature and chamber pressure were set as 550 o C and 0.3 torr, respectively.…”

Section: Structural and Compositional Characteristics Of Si-rich Sic mentioning

confidence: 99%

All-Optical Cross-Absorption-Modulation Based Gb/s Switching With Silicon Quantum Dots

Huang

Cheng

et al. 2016

IEEE J. Select. Topics Quantum Electron.

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In silicon quantum dots (Si-QDs), the sub-bandgap cross-absorption-modulation (XAM) has been preliminarily observed and confirmed as a new kind of wavelength conversion process to enable ultrafast optical switching. By using the Si-QD doped Si-rich SiC x micro-ring resonator waveguide with a quality factor of 1.710 4 under an optimized gap spacing of 700 nm away from the bus waveguide, the XAM effect induces a wavelength-converted picosecond all-optical switching between pump and probe signals, which is attributed to a specific free-carrier absorption at probe wavelength caused by the two-photon-absorption induced carriers. The non-degenerate pump-probe analysis also shows a weak Kerr nonlinearity related ultrafast switching response from the changing envelope of the XAM probe pulse at red-shifted wavelength. These observations declare that the nano-scale Si-QDs can provide sufficiently large XAM effect to enable the ultrafast all-optical switching capability for pulsed optical logic applications. To confirm, the Si-QDs doped Si-rich SiC x waveguide modulator based 1.2 Gbit/s all-optical format inversion of a PRZ-OOK data-stream is demonstrated for the first time.

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Finite Silicon Atom Diffusion Induced Size Limitation on Self-Assembled Silicon Quantum Dots in Silicon-Rich Silicon Carbide

Cited by 36 publications

References 30 publications

Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

Si-QD Synthesis for Visible Light Emission, Color Conversion, and Optical Switching

All-Optical Cross-Absorption-Modulation Based Gb/s Switching With Silicon Quantum Dots

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