Finite-element simulation of a phase-field model for inclusion electromigration in {110}-oriented single crystal metal interconnects due to interface diffusion anisotropy

Dong, Congcong; Huang, Peizhen; Zhang, Jiaming

doi:10.1007/s00339-022-05754-z

Appl. Phys. A

2022

DOI: 10.1007/s00339-022-05754-z

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Finite-element simulation of a phase-field model for inclusion electromigration in {110}-oriented single crystal metal interconnects due to interface diffusion anisotropy

Congcong Dong

Peizhen Huang²,

Jiaming Zhang³

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2024

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A multi-phase-field model of void crossing grain boundary under electromigration-induced anisotropic surface diffusion in interconnects

Guo,

Huang

2024

European Journal of Mechanics - A/Solids

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A multi-phase-field model of void crossing grain boundary under electromigration-induced anisotropic surface diffusion in interconnects

Guo,

Huang

2024

European Journal of Mechanics - A/Solids

View full text Add to dashboard Cite

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Finite-element simulation of a phase-field model for inclusion electromigration in {110}-oriented single crystal metal interconnects due to interface diffusion anisotropy

Cited by 1 publication

References 63 publications

A multi-phase-field model of void crossing grain boundary under electromigration-induced anisotropic surface diffusion in interconnects

A multi-phase-field model of void crossing grain boundary under electromigration-induced anisotropic surface diffusion in interconnects

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