Finite element model optimization and thermal network parameter extraction of press-pack IGBT

Ren, Hai; Lai, Wu‐Wei; Jiang, Zeshen; Kang, Shengyang; Yao, Ran; Li, Ran; Li, Hui; Jin, Rui; Wen, Jihong

doi:10.1109/apec.2018.8341428

Cited by 11 publications

(3 citation statements)

References 12 publications

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“…It is found in [20] that even cyclic junction temperature variations with low amplitude during normal operation may contribute to the aging process of a power module, even if it does not directly initiate a crack, which means that the stress concentration may have an impact on the thermal impedance changes. A multi-input and multi-output thermal network model of a press-pack IGBT device is established in [21] to simplify the calculation of some model parameters, but only the thermal coupling effect between chips is taken into account. To conclude, although various efforts have been made to calculate the junction temperature of the IGBT module and the converter system, there is still room for research in the improved junction temperature estimation method based on a multi-layer coupled thermal impedance model considering the device-level and module-level thermal coupling effects.…”

Section: B Existing Temperature Monitoring Methodsmentioning

confidence: 99%

Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules

et al. 2022

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The overheating stress of power devices is the main cause of converter system failures, so real-time temperature acquisition, as well as timely over-temperature protection, under various operating conditions are key to achieving a more reliable energy conversion. In this paper, an improved threedimensional (3-D) coupled thermal model for insulated gate bipolar transistors (IGBTs) and related heatsink is constructed by considering the thermal coupling effects at both the device-and the module level. Furthermore, the coupled thermal impedance parameters are thereby extracted based on the finiteelement method (FEM), so that the dynamic loss and transient temperature distribution under actual working conditions can be obtained based on this electro-thermal coupling model. Meanwhile, to avoid the overheating damage of power devices due to untimely action of the negative temperature coefficient (NTC) thermistor over-temperature protection, this article aims at the idle IGBT device in the three-level neutral-point clamped (NPC) application using IGBT half-bridge modules, combined with the emitter terminal temperature, and finally realizes the multiple over-temperature protection settings. The improved temperature monitoring methods proposed in this paper are realized by the drive and control circuits and verified through simulation and experimental results.INDEX TERMS Reliability, half-bridge IGBT module, three-level NPC topology, temperature monitoring, over-temperature protection.

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Section: B Existing Temperature Monitoring Methodsmentioning

confidence: 99%

Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules

et al. 2022

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“…, n) can be calculated based on the equal sublayer energy Q 1 (0) . The thermal network parameters are obtained from Equations ( 13) and (14). Then, the temperature distribution T(x,t) is obtained from the thermal network model.…”

Section: Chip Vertical Path Thermal Network Modelmentioning

confidence: 99%

“…In [13], by building a two-dimensional TCAD finite element model of a field-stop IGBT chip, the effect of the peak electric field on the temperature distribution inside the chip was shown. In [5,14], the heat source in the active area of the finite element model was divided into surface heat source and body heat source according to the on-state voltage drop distribution of the IGBT chip, and it concluded that the loading of the distributed heat source can predict the chip junction temperature more accurately; Reference [15] performed the IGBT module longitudinal cut to obtain the cross temperature distribution of the seven-layer structure of the module, but there were only two monitoring points along the chip vertical path, and the temperature distribution during the switching transient could not be obtained due to the limitation of the sampling frequency of the thermal imager.…”

Section: Introductionmentioning

confidence: 99%

Short-Duration Transient Temperature Distribution Prediction Model along Chip Vertical Path Applicable to Multi-Timescale Simulation

et al. 2022

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Based on extremely uneven temperature distribution along the insulated gate bipolar transistor (IGBT) chip vertical path during switching transients, a short-duration transient microsecond-scale prediction model applicable to multi-timescale simulation is presented in this paper. Traditional thermal models often take the chip active area as a uniform heat source to obtain a victual junction temperature (Tvj). In this paper, a discrete distributed heat source model combined with a thermal network model based on the sublayer division strategy is proposed to achieve an accurate temperature distribution description along the chip vertical path. Taking a 1700 V/3600 A IGBT module as an example, the proposed model can evaluate the short-duration transient temperature distribution along the chip vertical path and the error is less than 2 °C compared with the finite element model. Meanwhile, the model is applied to a single short-duration transient timescale and multi-timescale systems separately, and the simulation speed is increased by more than 80 times and 297 times, which verifies its validity and accuracy.

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Thermal Resistance Measurements Method for Press-pack Power Devices

Zhang¹,

Liu²,

Qi³

et al. 2022

2022 IEEE 5th International Conference on Automation, Electronics and Electrical Engineering (AUTEEE)

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Finite element model optimization and thermal network parameter extraction of press-pack IGBT

Cited by 11 publications

References 12 publications

Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules

Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules

Short-Duration Transient Temperature Distribution Prediction Model along Chip Vertical Path Applicable to Multi-Timescale Simulation

Thermal Resistance Measurements Method for Press-pack Power Devices

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