Finite-element calculation of the influence of interdiffusion on eigenstates in a GaAs/Al x Ga1-x As single-quantum-well structure

Zhao, An Ping; Cvetkovic, S.R.; Yang, Zuo Ya

doi:10.1007/bf00430190

Cited by 3 publications

References 17 publications

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Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Johnson

Freund

Akyüz

et al. 1998

Journal of Applied Physics

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Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here a technique is presented for calculating the influence of strain on electronic properties. First the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wavefunctions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two Si x Ge 1−x submicron resonant tunneling devices, a quantum wire with two dimensional confinement and a quantum dot with three dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wavefunctions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.1

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Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Johnson

Freund

Akyüz

et al. 1998

Journal of Applied Physics

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Exact Numerical Solution of Schrödinger's Equation for a Particle in an Interaction Potential of General Shape

Rieth

Schommers

Baskoutas

2002

Int. J. Mod. Phys. B

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A method is proposed for the quantum-mechanical determination of the eigenstates and eigenvalues of a particle (e.g. an electron) in a potential of general shape. For such systems the method allows one to calculate the exact solutions of the stationary Schrödinger equation. For the application of this method any well-known reference system is needed. A transition from the stationary reference system to the stationary system under investigation is performed by means of the time-dependent Schrödinger equation. The results are compared with various standard methods; alternative numerical methods will be discussed critically.

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Bandstructure and Modal Gain of Partially Interdiffused InGaAs/GaAs/AlGaAs SQW Lasers

Gómez-Alcalá

Fraile-Peláez

Esquivias-Moscardó

1996

Integrated Photonics Research

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Finite-element calculation of the influence of interdiffusion on eigenstates in a GaAs/Al x Ga1-x As single-quantum-well structure

Cited by 3 publications

References 17 publications

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Exact Numerical Solution of Schrödinger's Equation for a Particle in an Interaction Potential of General Shape

Bandstructure and Modal Gain of Partially Interdiffused InGaAs/GaAs/AlGaAs SQW Lasers

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