Finishing Surface Treatment of Potassium Titanyl Phosphate Single Crystals by Argon Cluster Ions

Korobeishchikov, N. G.; Nikolaev, I. V.; Roenko, M. A.

doi:10.1134/s1063785019030295

Cited by 16 publications

(2 citation statements)

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“…Cluster ions can be used to effectively modify the surfaces of various materials due to the collective interaction of hundreds or thousands of weakly bound cluster atoms with target atoms [33]. With the help of cluster ion processing, it is possible to etch and smooth the surface to a subnanometer roughness level [34][35][36][37][38][39][40][41][42][43], while cluster ions, as a rule, damage the subsurface layer with a depth of only a few nanometers [36], without changing the bulk structure of the material. To the best of our knowledge, the change in the morphology of AlN films after treatment with gas cluster ions has not previously been investigated.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates

et al. 2022

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In this paper, the influence of surface modification on the characteristics and properties of AlN thin films on Si and glass-ceramics substrates is investigated. The surface modification was made at various parameters of argon cluster ions. By using XRD and Raman spectroscopy, it was shown that the obtained AlN films have a hexagonal structure with a characteristic direction of texturing along the c axis and slight deviations from it. A comparison of the AlN surface morphology obtained by atomic force microscopy before and after cluster processing was demonstrated. This demonstrated that the cluster ions with low energy per atom (E/N = 10 eV/atom) have a high efficiency of surface smoothing. A decrease in the intensity of the Raman peaks and an increase in their full-width after bombardment with cluster ions were found, which may be caused by a change in the physicochemical state of the surface. The optical properties, the quality of the boundaries, and the distribution map of the thickness of the functional layer of AlN were investigated by the methods of spectral and spatial resolution ellipsometry. By using the cross-sectional SEM, the direction of crystallite texturing was demonstrated. The influence of argon cluster ion bombardment on the stoichiometry of samples was analyzed by EDX spectroscopy. The results obtained demonstrate the efficiency of the cluster ion smoothing of polycrystalline thin films for microelectronics, particularly when creating surface acoustic wave resonators.

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Section: Introductionmentioning

confidence: 99%

The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates

et al. 2022

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“…Interest in the processes of interaction of gas cluster ions with solids is due to the role that particle beams play in modern fundamental research and practical applications. Over the past two decades the gas cluster ions beams have been successfully used both for modification (ultraprecise polishing, implantation at ultra-low depths) [1][2][3][4][5], and for surface analysis by secondary ion mass spectrometry (SIMS) [6,7] or X-ray photoelectron spectroscopy (XPS) [8,9].…”

Section: Introductionmentioning

confidence: 99%

Preferential sputtering of alloys by gas cluster ions

et al. 2022

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Topography and composition of the surface of nickel-based alloys under irradiation with Ar2500+ cluster ions with the energy of 20 keV, and atomic Ar+ ions with the energy of 3 keV have been studied. It has been experimentally found that the surface of the alloys is depleted by a component with a lower binding energy. It is shown that the change in the surface concentrations of the alloy components upon irradiation with cluster ions is an order of magnitude greater than upon sputtering with atomic ions. The degree of change in the surface composition is determined by the ratio of the sputtering yields of the alloy components. Keywords: gas cluster ions, ion sputtering, XPS, preferential sputtering, surface topography.

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Energy distributions of the particles sputtered by gas cluster ions. Experiment and computer simulation

Ieshkin

Nazarov

Tatarintsev

et al. 2020

Surface and Coatings Technology

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Finishing Surface Treatment of Potassium Titanyl Phosphate Single Crystals by Argon Cluster Ions

Cited by 16 publications

References 10 publications

The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates

The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates

Preferential sputtering of alloys by gas cluster ions

Energy distributions of the particles sputtered by gas cluster ions. Experiment and computer simulation

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