2016
DOI: 10.1016/j.nimb.2016.05.021
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Fine-tuning the etch depth profile via dynamic shielding of ion beam

Abstract: We introduce a method for finely adjusting the etch depth profile by dynamic shielding in the course of ion beam etching (IBE), which is crucial for the ultraprecision fabrication of large optics. We study the physical process of dynamic shielding and propose a parametric modeling method to quantitatively analyze the shielding effect on etch depths, or rather the shielding rate, where a piecewise Gaussian model is adopted to fit the shielding rate profile. We have conducted two experiments. In the experiment o… Show more

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Cited by 3 publications
(2 citation statements)
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“…The length of the grating part is 8 µm with 18 grooves. The etching depth increases from 20 nm to 280 nm linearly, which can improve the diffraction efficiency of the grating [44]. Around the working wavelengths of 780 nm and 850 nm, the refractive index of Si 3 N 4 and SiO 2 are set as 1.9935 and 1.45, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The length of the grating part is 8 µm with 18 grooves. The etching depth increases from 20 nm to 280 nm linearly, which can improve the diffraction efficiency of the grating [44]. Around the working wavelengths of 780 nm and 850 nm, the refractive index of Si 3 N 4 and SiO 2 are set as 1.9935 and 1.45, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Reactive ion etching (RIE) is a useful method in the fabrication of diffraction optics. Recently we fabricated large-aperture BSGs by the RIE process, where the ion beam emitted from linear ion source scans over BSGs along a linear guide meanwhile the rotary leaf scans along the elongated footprint of ion beam, thus the spatial distribution of etch depths is finely adjusted for improving the diffractive uniformity of BSG [14,15]. Now we try to exploit more applications by combining optical fabrication technique with linear ion source and the aforementioned surface modeling method.…”
Section: Optical Fabrication With Linear Ion Sourcementioning
confidence: 99%