Fine Structure Due to Donor–Acceptor Pair Luminescence in Compensated Si

Abstract

A fine structure on the higher energy side of donor-acceptor (DA) pair luminescence at 4.2 K has been analyzed in compensated Si involving P donors and B acceptors. We calculated the density distribution of DA pairs against photon energy from the number of pairs as a function of the transition energy of respective pairs. A close agreement was obtained between the density curve and the observed spectral structure using the generally accepted values of energy gap and P donor and B acceptor ionization energies. This allows us to conclude that the structure is due to discrete DA pair recombination.

Pressure‐Dependent Behavior of Defect‐Modulated Band Structure in Boron Arsenide

“…From Figure 2e, the formation energy of C is higher than Si, and the concentration of C B is estimated to be around 1.53 × 10 14 cm −3 , and of C As is around 6.36 × 10 10 cm −3 , with graphite as reference. In the literature, usually the concentration of DAP defects that induces photoluminescence falls into the range of 10 15 to 10 18 cm −3 , [ 43–45 ] higher than our simulated concentrations. However, with C defects in other initial form other than graphite, the formation energy will be lower, resulting in much higher concentration of C B and C As .…”

Donor−acceptor pair luminescence in compensated Si for solar cells

“…The shape of the structure of the NP band was identical with that of the TO bands. 8 The structure appeared under both high and low excitation conditions in the NP and TO bands, as shown in Fig. 1.…”

“…Recently the present authors have observed a fine structure in compensated Si for solar cells and identified its origin as being due to the DA pair emission involving shallow P donors and B acceptors. 8 The use of low-purity grade Si materials, called "solargrade Si (SoG-Si)," is essential for the mass production of solar cells to cope with current energy and environmental issues. The concentrations of the residual donor and acceptor impurities in the SoG-Si are on the order of 10 15 À10 17 cm À3 , leading to a heavy compensation between donors and acceptors.…”

Donor–Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride

“…As one of the fluorescence mechanisms, the donor-acceptor pair (DAP) transition between the ionized donors and acceptors has been studied in traditional semiconductors, including silicon 25,26 , silicon carbide 27,28 , diamond 29 and other compound semiconductors [30][31][32][33] . Generally, the DAP transition is characterized by a series of sharp PL lines with a broadband wavelength range at low temperatures [26][27][28][29] .…”