Fine Structure and Spin Relaxation of Excitons Localized at CdSe Sub-Monolayer Insertions in a ZnSe Matrix

Verbin, S. Yu.; Karimov, O. Z.; Reznitsky, A.; Klochikhin, A. A.; Ruf, T.; Tenishev, L.; Permogorov, S.; Иванов, С. В.; Wolverson, Daniel; Davies, J.

doi:10.1002/1521-3951(200103)224:2<545::aid-pssb545>3.0.co;2-j

phys. stat. sol. (b)

2001

DOI: 10.1002/1521-3951(200103)224:2<545::aid-pssb545>3.0.co;2-j

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Fine Structure and Spin Relaxation of Excitons Localized at CdSe Sub-Monolayer Insertions in a ZnSe Matrix

S. Yu. Verbin

O. Z. Karimov

A. Reznitsky

et al.

Abstract: Resonant spin-flip Raman scattering in tilted magnetic fields up to 14 T has been used to investigate excitons localised by the random disorder created by sub-monolayer insertions of CdSe in a ZnSe matrix. The field dependences of the Raman shifts, of the linewidths of the signals and of their intensities have been measured and fitted by a simple theoretical model and the g-factors and exchange parameters have been determined. It is concluded that spin-flip of the total exciton spin is one of the important mec… Show more

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Cited by 3 publications

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“…This case is different for small CdSe/ZnSe QDs investigated in Ref. [10,22]. Here, values of ∆ st ∼ 1 meV, g ∼ 2 and E lh ∼ 40 meV are reported.…”

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confidence: 64%

Exciton spin relaxation in single semiconductor quantum dots

2003

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We study the relaxation of the exciton spin (longitudinal relaxation time $T_{1}$) in single asymmetrical quantum dots due to an interplay of the short--range exchange interaction and acoustic phonon deformation. The calculated relaxation rates are found to depend strongly on the dot size, magnetic field and temperature. For typical quantum dots and temperatures below 100 K, the zero--magnetic field relaxation times are long compared to the exciton lifetime, yet they are strongly reduced in high magnetic fields. We discuss explicitly quantum dots based on (In,Ga)As and (Cd,Zn)Se semiconductor compounds.Comment: accepted for Phys. Rev.

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“…This case is different for small CdSe/ZnSe QDs investigated in Ref. [10,22]. Here, values of ∆ st ∼ 1 meV, g ∼ 2 and E lh ∼ 40 meV are reported.…”

mentioning

confidence: 64%

Exciton spin relaxation in single semiconductor quantum dots

2003

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Exciton spin–flip processes in single quantum dots

Tsitsishvili

Baltz

Kalt

2004

phys. stat. sol. (c)

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We study the relaxation of the exciton spin (longitudinal spin-relaxation time T 1 ) in single asymmetrical quantum dots (QD) at low temperatures. The main relaxation mechanism is due to the exciton spin-acoustic phonon coupling via the strain-dependent exchange interaction; piezoelectric coupling is less efficient. For zero magnetic field, relaxation within the radiative exciton-doublet for typical QDs is very slow compared to the exciton lifetime. Relaxation to nonradiative states becomes important for QDs with large singlet-triplet splitting of a few meVs. The calculated relaxation times strongly decrease in high magnetic fields.1 Introduction Most concepts for quantum information processing involving quantum dots (QDs) are based on optical generation, manipulation and read-out of spins. One has therefore to investigate the dynamics of the excitonic spin. Studies of the longitudinal spin-relaxation time T 1 are rare since they require strict resonant excitation conditions and/or high magnetic fields. Recent resonant excitation experiments on InAs QDs indicate no exciton-spin relaxation at low temperatures and magnetic fields up to 8 T [1]. Similar results are reported for CdSe QDs with large lateral dimensions (comparable to twice the exciton Bohr radius of $5 nm in bulk CdSe crystals) [2,3]. However, longitudinal spin-relaxation times comparable to the exciton lifetime were deduced from high magnetic field experiments for much smaller CdSe QDs [4].In a previous communication [5], we studied the exciton-spin relaxation in QDs within the radiative doublet of the ground (heavy-hole) exciton state at low temperatures. In this paper we carry on these studies and investigate additionally the spin relaxation to near by nonradiative states. We discuss explicitly quantum dots based on (In, Ga)As and (Cd, Zn)Se semiconductor compounds. Besides, we consider the contribution of piezoelectric coupling to the excitonic relaxation processes which is considered as an important mechanism for electron spin relaxation in QDs [6].

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Correlated spin systems in undoped CdSe quantum dots

et al. 2013

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Fine Structure and Spin Relaxation of Excitons Localized at CdSe Sub-Monolayer Insertions in a ZnSe Matrix

Cited by 3 publications

References 6 publications

Exciton spin relaxation in single semiconductor quantum dots

Exciton spin relaxation in single semiconductor quantum dots

Exciton spin–flip processes in single quantum dots

Correlated spin systems in undoped CdSe quantum dots

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