Fine interference effects in X-ray diffraction from multilayered structures

Zolotoyabko, E.

doi:10.1016/s0040-6090(97)01081-x

Cited by 5 publications

(8 citation statements)

References 7 publications

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“…[2][3][4]). It should be emphasized that an amorphous layer results in zero coherent scattering amplitude, E k = 0, but influences the total scattering amplitude in Eq.…”

Section: The Simulation Algorithmmentioning

confidence: 99%

“…The phases, dw k , represent random jumps of structural and geometrical parameters across the interfaces. The interfacial roughness is the most important example [2][3][4]. In order to handle the random phase jumps we have to apply an appropriate averaging procedure.…”

Section: The Simulation Algorithmmentioning

confidence: 99%

“…In order to partially solve this problem we developed a novel X-ray diffraction simulation program in the MATLAB format, which is based on the direct wave summation method [2][3][4]. In this method, the diffraction problem is solved in a singlescattering approximation, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…The direct wave summation (DIWAS) routine can be used for any multilayer structure, with no limitations and includes all options examined before [2][3][4]6]. For example, it permits introducing local variations of important parameters, such as defect-induced fluctuations of d-spacings within an individual sub-layer and interface roughness.…”

Section: Introductionmentioning

confidence: 99%

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Simulation of X-ray diffraction profiles in multilayers by direct wave summation: Application to asymmetric reflections

Zamir

Steinberg²,

Lakin

et al. 2006

Applied Surface Science

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“…[2][3][4]). It should be emphasized that an amorphous layer results in zero coherent scattering amplitude, E k = 0, but influences the total scattering amplitude in Eq.…”

Section: The Simulation Algorithmmentioning

confidence: 99%

Section: The Simulation Algorithmmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Simulation of X-ray diffraction profiles in multilayers by direct wave summation: Application to asymmetric reflections

Zamir

Steinberg²,

Lakin

et al. 2006

Applied Surface Science

View full text Add to dashboard Cite

“…In order to partially solve this problem, we developed a novel x-ray diffraction simulation program in the MATLAB format, which is based on the direct wave summation (DIWAS) method [2][3][4]. In the past, this method has been successfully applied to study lattice disorder in Si-Ge films, to characterize very thin quantum well structures in III-V films and the structural quality in SOI layers, to study diffusion and implantation processes in II-VI films and in LiNbO 3 (see [5] and references therein).…”

Section: Introductionmentioning

confidence: 99%

Simulation of x-ray diffraction profiles in imperfect multilayers by direct wave summation

Zamir¹,

Steinberg²,

Tisch³

et al. 2005

J. Phys. D: Appl. Phys.

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A novel simulation program in the MATLAB format for x-ray diffraction profiles in multilayers was developed, which can be applied to any multilayered structure with no limitations. The simulation algorithm (nickname DIWAS) is based on direct summation of waves, scattered by individual atomic planes. It takes into account strain and concentration-induced fluctuations of interplanar spacings, interface roughness and buried amorphous layers, and enables the addition of diffuse scattering profiles.The program allows handling of asymmetric reflections as well as symmetric ones, taking special care of the effective layer thickness. The summation over individual layers can be done coherently or incoherently, depending on the interface structure. To make the fitting procedure comprehensible, the contribution of every layer can be plotted separately.In this paper, the direct wave summation (DIWAS) routine is described in detail and is applied to fit experimental diffraction profiles taken from MOVPE grown heterostructures and superlattices of practical importance, such as InGaN/GaN/AlGaN/sapphire, GaAsN/GaAs, InGaAsP/InP and InGaAs/InP.

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High-resolution x-ray diffraction and high-resolution scanning electron microscopy studies of Si-based structures with a buried amorphous layer

Ahilea

Zolotoyabko

Härtwig

et al. 1998

Journal of Applied Physics

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Structural and geometrical parameters of Si samples with buried amorphous layers, produced by oxygen implantation and high-temperature annealings, were measured by high-resolution x-ray diffraction and high-resolution scanning electron microscopy. By using a newly developed simulation procedure precise fittings of x-ray diffraction spectra were made and important parameters were derived, such as the averaged fluctuations of the thickness of the amorphous layer (“interface roughness”) and of the interplanar spacing in the Si top layer. The data obtained revealed a reduction in interface roughness, i.e., an improvement of the samples’ quality after additional high-temperature annealing. This conclusion was supported by electron microscopy images demonstrating a more complete dissolution of SiO2 precipitates as a result of additional heat treatment. The importance of more sophisticated annealing was also confirmed by the Moiré x-ray diffraction topographs taken on the topography beamline of the European Synchrotron Radiation Facility.

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Fine interference effects in X-ray diffraction from multilayered structures

Cited by 5 publications

References 7 publications

Simulation of X-ray diffraction profiles in multilayers by direct wave summation: Application to asymmetric reflections

Simulation of X-ray diffraction profiles in multilayers by direct wave summation: Application to asymmetric reflections

Simulation of x-ray diffraction profiles in imperfect multilayers by direct wave summation

High-resolution x-ray diffraction and high-resolution scanning electron microscopy studies of Si-based structures with a buried amorphous layer

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