1969
DOI: 10.1016/0022-5088(69)90161-1
|View full text |Cite
|
Sign up to set email alerts
|

Fine-grain tungsten by chemical vapor deposition

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

1977
1977
2010
2010

Publication Types

Select...
3
2
1

Relationship

0
6

Authors

Journals

citations
Cited by 10 publications
(1 citation statement)
references
References 1 publication
0
1
0
Order By: Relevance
“…Tungsten nitride is a potentially useful material for diffusion barriers and gate electrodes in many modern electronic devices.1"5 Traditionally, tungsten nitride is prepared using techniques that employ energized particles, i.e., ion implantation, sputtering, ion-beam-assisted deposition, plasma jet spray, and plasma enhanced chemical vapor deposition.3"7 Alternatively, chemical nitridation of tungsten metal and reduction of WC16, WF6, and WO3 by NH3 at high temperatures are employed.8"11 Unlike many other transition metal nitrides, thin films of tungsten nitride are rarely grown by chemical vapor deposition (CVD). [10][11] We and others showed that organoimido complexes of transition metals can be employed as single-source precursors to grow metal nitride thin films by metallo-organic chemical vapor deposition (MOCVD).1213 Here, we report the first example of growing tungsten nitride thin films by low pressure MOCVD employing (tBuN)2W(NHtBu)2, 1, an organoimido complex of tungsten, as the single-source precursor.14…”
Section: Introductionmentioning
confidence: 93%
“…Tungsten nitride is a potentially useful material for diffusion barriers and gate electrodes in many modern electronic devices.1"5 Traditionally, tungsten nitride is prepared using techniques that employ energized particles, i.e., ion implantation, sputtering, ion-beam-assisted deposition, plasma jet spray, and plasma enhanced chemical vapor deposition.3"7 Alternatively, chemical nitridation of tungsten metal and reduction of WC16, WF6, and WO3 by NH3 at high temperatures are employed.8"11 Unlike many other transition metal nitrides, thin films of tungsten nitride are rarely grown by chemical vapor deposition (CVD). [10][11] We and others showed that organoimido complexes of transition metals can be employed as single-source precursors to grow metal nitride thin films by metallo-organic chemical vapor deposition (MOCVD).1213 Here, we report the first example of growing tungsten nitride thin films by low pressure MOCVD employing (tBuN)2W(NHtBu)2, 1, an organoimido complex of tungsten, as the single-source precursor.14…”
Section: Introductionmentioning
confidence: 93%