Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC

Crofton, J.; Mohney, Suzanne E.; Williams, John R.; Isaacs-Smith, T.

doi:10.1016/s0038-1101(01)00208-8

Cited by 68 publications

(49 citation statements)

References 6 publications

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“…In forward state, current densities and efficiency have been improved (200 A/cm2 @ 5 V at room temperature) also due to the improvement of metallization step and subsequent annealing at IMM Bologne [9]. Results of acceptable ohmic contacts on highly doped P+ zones are comparable with other results already published in literature [10]. As it can be observed in Figure 5, Ampere-lab is now able to present results of breakdown voltage in the range of 4 kV, with a maximum of 4.8 kV with low reverse current density in fluoride ambient (Galden and SF6) [11].…”

Section: B Fabrication Of High Voltage Bipolar Devicessupporting

confidence: 82%

SiC power semiconductor devices for new applications in power electronics

Planson

Tournier²,

Bevilacqua³

et al. 2008

2008 13th International Power Electronics and Motion Control Conference

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Section: B Fabrication Of High Voltage Bipolar Devicessupporting

confidence: 82%

SiC power semiconductor devices for new applications in power electronics

Planson

Tournier²,

Bevilacqua³

et al. 2008

2008 13th International Power Electronics and Motion Control Conference

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“…% in concentration was found empirically to be beneficial for yielding low-contact resistance. 46,47 After lifting off the photoresist, the binary TiAl contact layers were finally annealed at 1273 K for 2 min in an ultrahigh-vacuum chamber with pressure of less than 1 ϫ 10 −7 Pa.…”

Section: Experimental and Calculational Detailsmentioning

confidence: 99%

Ohmic contacts on silicon carbide: The first monolayer and its electronic effect

et al. 2009

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We demonstrate that origin of the long-standing contact issue in silicon carbide devices can be understood and technologically manipulated at the atomic level. Using advanced transmission electron microscopy, we attribute qualitatively the formation of ohmic contacts to silicon carbide to an epitaxial, coherent, and atomically ordered interface. Quantitatively, first-principles calculations predict that this interface can trap an atomic layer of carbon and hence enable lowered Schottky barrier and enhanced quantum electron transport. The combined experimental and theoretical studies performed provide insight into the complex electronic and electric effects of the buried contact interface, which are fundamental for improving the contact in future electronics based on wide-band-gap semiconductors such as silicon carbide and diamond.

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“…9 Extensive investigations have been carried out for development of the ohmic contacts to p-type SiC by the DA technique, and a variety of ohmic contact materials (including mainly titanium or aluminum) have been developed. [10][11][12][13][14][15][16][17][18][19][20][21][22] Among these contact materials, Ti/Al, 5,[10][11][12][13][14][15][16] Ni/Ti/Al, 17,18 and Ge/Ti/Al 19 are expected to satisfy the device designers' requirements (here, a sign "/" between the metals indicates the deposition sequence. ), because their contacts yielded a low specific contact resistance and demonstrated thermal stability.…”

Section: Introductionmentioning

confidence: 99%

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

Tsukimoto

Nitta

Sakai

et al. 2004

Journal of Elec Materi

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In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2 ϫ 10 Ϫ5 Ω-cm 2 and 7 ϫ 10 Ϫ5 Ω-cm 2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and highresolution transmission electron microscopy (HRTEM). Ternary Ti 3 SiC 2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti 3 SiC 2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti 3 SiC 2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

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Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC

Cited by 68 publications

References 6 publications

SiC power semiconductor devices for new applications in power electronics

SiC power semiconductor devices for new applications in power electronics

Ohmic contacts on silicon carbide: The first monolayer and its electronic effect

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

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