Final results from the MISSE5 GaAs on Si solar cell experiment

Wilt, David M.; Pal, AnnaMaria; Ringel, S. A.; Fitzgerald, Eugene A.; Jenkins, Phillip P.; Walters, Robert J.

doi:10.1109/pvsc.2008.4922860

Cited by 4 publications

(3 citation statements)

References 2 publications

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“…The PEC was attached to the ISS and opened in orbit to expose the FTSCE and other experiments (see Figure 5). At the end of the mission, the PEC was closed and returned to Earth for further investigation [21][22][23][24][25][26][27]. Two FTSCE missions have been completed and FTSCE III is presently in orbit.…”

Section: Space Solar Cell Experimentsmentioning

confidence: 99%

“…The FTSCE platform has included a wide range of solar cell technologies such as state-of-the-art triple junction InGaP/GaAs/Ge solar cells from several vendors, thin film amorphous Si and CuIn(Ga)Se2 cells. Also single-junction GaAs cells grown on Si wafers, thin film GaAs cells as well as metamorphic and inverted multi-junction (IMM) cells were tested [21][22][23][24][25][26][27]. The data were continuously telemetered to the Earth.…”

Section: Space Solar Cell Experimentsmentioning

confidence: 99%

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Solar cell experiments for space: past, present and future

et al. 2013

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Since the early beginnings of the space age in the 1950s, solar cells have been considered as the primary choice for long term electrical power generation of satellites and space systems. This is mainly due to their high power/mass ratio and the good scalability of solar modules according to the power requirements of a space mission. During the last decades, detailed solar cell material studies including the non-trivial interaction with high-energy space particles have led to continuous and significant improvements in device efficiency. This allowed the powering of advanced space systems like the International Space Station, rovers on the Martian surface as well as satellites which have helped to understand the universe and our planet. It is noteworthy that in addition to their success in space, these photovoltaic technologies have also broken ground for the application of photovoltaic systems in terrestrial systems. This paper discusses the development of space solar cells, gives insight into related experiments like the analysis of the interaction with space particles and provides an overview on challenges and requirements for future space missions.

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Section: Space Solar Cell Experimentsmentioning

confidence: 99%

Section: Space Solar Cell Experimentsmentioning

confidence: 99%

Solar cell experiments for space: past, present and future

et al. 2013

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“…This epilayer was used as the starting point for the deposition of the III–V junctions in the 3J PV cell. Unfortunately, the thermal strain accumulated in the whole stack (SiGe + III–Vs) is more than sufficient to generate a significant substrate bowing and several microcracks in the active layers, to such an extent that cell efficiency drops at the end of cell life . In particular, cracks are randomly created because of temperature oscillations occurring during regular operation of the devices, both in concentrated terrestrial and in space conditions, and because of mechanical stresses.…”

Section: Introductionmentioning

confidence: 99%

Integration of InGaP/GaAs/Ge triple-junction solar cells on deeply patterned silicon substrates

Scaccabarozzi

Binetti

Acciarri

et al. 2016

Prog. Photovolt: Res. Appl.

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We report preliminary results on InGaP/InGaAs/Ge photovoltaic cells for concentrated terrestrial applications, monolithically integrated on engineered Si(001) substrates. Cells deposited on planar Ge/Si(001) epilayers, grown by plasmaenhanced chemical vapor deposition, provide good efficiency and spectral response, despite the small thickness of the Ge epilayers and a threading dislocation density as large as 10 7 /cm 2 . The presence of microcracks generated by the thermal misfit is compensated by a dense collection grid that avoids insulated areas. In order to avoid the excessive shadowing introduced by the use of a dense grid, the crack density needs to be lowered. Here, we show that deep patterning of the Si substrate in blocks can be an option, provided that a continuous Ge layer is formed at the top, and it is suitably planarized before the metalorganic chemical vapor deposition. The crack density is effectively decreased, despite that the efficiency is also lowered with respect to unpatterned devices. The reasons of this efficiency reduction are discussed, and a strategy for improvement is proposed and explored. Full morphological analysis of the coalesced Ge blocks is reported, and the final devices are tested under concentrated AM1.5D spectrum.

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