Filter and resonator using langasite

Sato, Muneharu; Moroishi, K.I.; Ishigami, S.; Sakharov, S.; Medvedev, A. V.

doi:10.1109/freq.1996.559884

Cited by 11 publications

(3 citation statements)

References 3 publications

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“…The resonance frequency f of a resonator as well as the mass sensitivity S m depend on the resonator thickness 14,15,16 . In order to increase both values, membranes of different thickness are prepared as described in section 2.1.…”

Section: Membranesmentioning

confidence: 99%

Miniaturized piezoelectric structures for application temperatures up to 1000 °C

et al. 2011

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Miniaturized piezoelectric structures based on the material langasite are fabricated and characterized. Single crystalline langasite is a high-temperature stable material and can be excited using the piezoelectric effect up to temperatures above 1000 °C. The scope of our research is to design and realize small piezoelectric structures to serve as resonant sensors or active electronic components at high temperatures. Wet chemical etch processes are developed which enable isotropic and anisotropic etching with rates up to 90 µm/h. Small structures such as membranes as well as cantilevers are prepared. Electrical and optical characterization provides information about the electromechanical properties of those structures. Resonance properties are determined with electrical impedance measurements in-situ at temperatures close to 1000 °C. The temperature dependent frequency shift and the resonator quality factor are determined for membranes, cantilevers and tuning forks. In addition, investigations with a laser interferometer are obtained. Thereby, the spatial distribution of the vibration displacement is observed for several piezoelectric devices.

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Section: Membranesmentioning

confidence: 99%

Miniaturized piezoelectric structures for application temperatures up to 1000 °C

et al. 2011

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“…For designing and application of piezoelectric devices, the materials group of langasite (LGS, La 3 Ga 5 SiO 14 ) with the Ca 3 Ga 2 Ge 4 O 14 (CGG) type crystals structure has merits in terms of piezoelectric properties, which exhibit intermediate values between those of quartz and lithium tantalate [1][2][3]. Compounds such as La 3 Nb 0.5-Ga 5.5 O 14 (LNG) [4], La 3 Ta 0.5 Ga 5.5 O 14 (LTG) [5], Sr 3 NbGa 3 Si 2 O 14 (SNGS) [6,7], Sr 3 TaGa 3 Si 2 O 14 (STGS) [8], Ca 3 NbGa 3 Si 2 O 14 (CNGS) [6,9] and Ca 3 TaGa 3 Si 2 O 14 (CTGS) [10] have been developed for the same purpose based on langasite crystals.…”

Section: Introductionmentioning

confidence: 99%

Growth of La3−xBaxTa0.5+x/2Ga5.5−x/2O14 compounds for the high-temperature piezoelectric applications

Jung¹,

Yang²,

Yoshikawa³

et al. 2004

Journal of Crystal Growth

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“…[1][2][3][4][5][6][7][8][9][10][11] In order to realize high performance langasite SAW filter devices, a high quality surface finish while maintaining flatness and parallelism of the crystal blank is extremely important since the insertion loss is determined by the properties of the surface upon which the surface acoustic wave travels. Langasite has larger band capability ͑approximately three times͒ than that of quartz and especially good high temperature stability and a larger frequency stability range.…”

Section: Introductionmentioning

confidence: 99%

Removal of chemical–mechanical polishing-induced damage layer in single crystal La3Ga5SiO14 by inductively coupled plasma etching

Cho

Pearton

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Chemical mechanical polishing defect reduction via a plasma etch in the 0.15 μm shallow trench isolation process J. Vac. Sci. Technol. B 21, 960 (2003); 10.1116/1.1568348 Plasma etch-back planarization coupled to chemical mechanical polishing for sub 0.18 μm shallow trench isolation technology Cl 2 plasma passivation of etch induced damage in GaAs and InGaAs with an inductively coupled plasma sourcePractical and controllable etch rates are obtained for chemical-mechanical polishing ͑CMP͒-processed single crystalline langasite ͑La 3 Ga 5 SiO 14 ͒ wafers in Cl 2 / Ar inductively coupled plasmas. The effects of plasma composition, ion flux, and ion energy on the etch rate and surface morphology are examined. A maximum etch rate ϳ1600 Å / min was achieved either at relatively high source power ͑ϳ1000 W͒ or high Cl 2 content conditions and the etched surfaces are found to retain smooth surface morphology under a wide range of plasma conditions. The CMP-induced subsurface layer formed in the langasite wafer was successfully removed in Cl 2 / Ar inductively coupled plasmas and the electrical conductivity was restored to the initial value ͑ϳ1 ϫ 10 −4 ⍀ −1 cm −1 ͒ measured before being CMP processed at an etch depth of ϳ700 Å.

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Filter and resonator using langasite

Cited by 11 publications

References 3 publications

Miniaturized piezoelectric structures for application temperatures up to 1000 °C

Miniaturized piezoelectric structures for application temperatures up to 1000 °C

Growth of La3−xBaxTa0.5+x/2Ga5.5−x/2O14 compounds for the high-temperature piezoelectric applications

Removal of chemical–mechanical polishing-induced damage layer in single crystal La3Ga5SiO14 by inductively coupled plasma etching

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