Film growth model of atomic layer deposition for multicomponent thin films

Kim, Jin-Hyock; Kim, Ja-Yong; Kang, Shin-Gak

doi:10.1063/1.1883728

Cited by 43 publications

(15 citation statements)

References 8 publications

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“…This deposition selectivity was attributed to the incubation time of HfO 2 deposition on the Cu surface [91]. In fact, surface-dependent growth has been reported several times in ALD [92][93][94][95]. Moreover, the dependence of ALD incubation time on the substrate has been reported many times [96][97][98][99].…”

Section: Inherent Surface Reactivitymentioning

confidence: 93%

Nanopatterning by Area‐Selective Atomic Layer Deposition

Lee

Bent

2011

Atomic Layer Deposition of Nanostructured Materials

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In conventional device fabrication, patterning is a top-down process based largely on photolithography and etching and is a main bottleneck for device downscaling. Atomic layer deposition (ALD) can provide an alternative bottom-up method for patterning when used in conjunction with self-assembled materials and selective chemistries. As presented in previous chapters, ALD is a powerful technique for depositing thin films for nanoscale device fabrication thanks to its excellent conformality, atomic scale thickness controllability, and large-area uniformity. Film growth controlled by surface reactions is one of the inherent properties of ALD. Because in an ideal ALD process, all of the precursors used for ALD react with each other only at the surface, highly conformal films can be deposited even inside complex 3D structures. By taking advantage of this inherent surface reaction property, ALD can be utilized for patterning based on a bottom-up process. In the following chapter, selective deposition methods will be presented. The contents include the surface modification techniques that are employed to exploit the surface reaction properties of ALD and related patterning processes with reported results. Concept of Area-Selective Atomic Layer DepositionFilm growth by ALD begins with formation of nuclei through a reaction of precursor molecules and surface species. Once nuclei are formed on a surface, the growth of the film may proceed by growth and coalescence of the nuclei, whereas if no nucleation occurs no film will be deposited. Therefore, the deposition characteristics of ALD strongly depend on the surface properties of the substrate. For example, in many cases, the nucleation of ALD is easy on hydrophilic OH-terminated substrates (e.g., SiO 2 ), while it is difficult on hydrophobic H-terminated surfaces (e.g., Si) [1][2][3][4]. Similarly, a nucleation delay in ALD, typically called the incubation time, is due to difficulty of nucleation at the surface. The nucleation delay and the variability of the growth characteristics depending on the surface can be problematic in typical thin

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Section: Inherent Surface Reactivitymentioning

confidence: 93%

Nanopatterning by Area‐Selective Atomic Layer Deposition

Lee

Bent

2011

Atomic Layer Deposition of Nanostructured Materials

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“…13 Ru͑C 2 H 5 C 5 H 4 ͒ 2 ͓Ru͑EtCp͒ 2 ͔ and Ti͑Oi -C 3 H 7 ͒ 4 ͑TTIP͒ were used as precursors, with O 2 and NH 3 as the reactant gases for RuO 2 and TiO 2 , respectively. SiO 2 was used as a thermal/electrical insulation layer.…”

Section: Controlling the Temperature Coefficient Of Resistance And Rementioning

confidence: 99%

Controlling the temperature coefficient of resistance and resistivity in RuO2–TiO2 thin films by the intermixing ratios between RuO2 and TiO2

Kwon

Kang

Kim

2008

Applied Physics Letters

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The temperature coefficient of resistance (TCR) properties and resistivities, depending on the RuO2 intermixing ratios for RuO2–TiO2 thin films and their thermal stability in the temperature range of 200–700°C, were investigated. The TCR values for the RuO2–TiO2 thin films ranged from −557.17to−54.923ppm∕K for the RuO2 intermixing ratios ranging from 0.52 to 0.81, with resistivities remaining in the range of 2600–370μΩcm. Moreover, the high structural stability and its stable oxide form of the RuO2–TiO2 thin films resulted in minimal change in both TCR values and resistivities even after O2 annealing process at 700°C.

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“…Subsequently, oxidizing agent vapor such as H 2 O(g) or O 2 (g) is introduced into the chamber and reacts with chemisorbed metal precursors to form the metal oxide and CO 2 (g) and H 2 O(g) upon oxidation of the organic ligands. The aforementioned steps constitute one cycle of ALD, and 2-6 cycles of ALD generally form a metal-oxide monolayer, depending on the molecular structures of the inorganic precursors [63][64][65][66][67][68]. A clear advantage of ALD with respect to chemical vapor deposition (CVD), in which two different precursors are provided at the same time onto the substrate surface, is that the thickness of thin films can be controlled on the atomic scale.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition for Preparation of Highly Efficient Catalysts for Dry Reforming of Methane

et al. 2019

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In this article, the structural and chemical properties of heterogeneous catalysts prepared by atomic layer deposition (ALD) are discussed. Oxide shells can be deposited on metal particles, forming shell/core type catalysts, while metal nanoparticles are incorporated into the deep inner parts of mesoporous supporting materials using ALD. Both structures were used as catalysts for the dry reforming of methane (DRM) reaction, which converts CO2 and CH4 into CO and H2. These ALD-prepared catalysts are not only highly initially active for the DRM reaction but are also stable for long-term operation. The origins of the high catalytic activity and stability of the ALD-prepared catalysts are thoroughly discussed.

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Film growth model of atomic layer deposition for multicomponent thin films

Cited by 43 publications

References 8 publications

Nanopatterning by Area‐Selective Atomic Layer Deposition

Nanopatterning by Area‐Selective Atomic Layer Deposition

Controlling the temperature coefficient of resistance and resistivity in RuO2–TiO2 thin films by the intermixing ratios between RuO2 and TiO2

Atomic Layer Deposition for Preparation of Highly Efficient Catalysts for Dry Reforming of Methane

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