Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: Effect of argon gas flow rate
Abstract:Addition of argon gas, with different flow rates, to vacuum evaporation deposition of film electrodes from Cu2SnSe3 source, affect nature and properties of the resulting films. While keeping other factors constant, it is possible to control nature and properties of the resulting films simply by controlling the argon gas flow rate. This work shows that films deposited from Cu2SnSe3 under high argon gas flow rate (25 cm3/min) involved SnSe as a major compound, with low concentration of Cu dopant. The film showed… Show more
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