Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)
DOI: 10.1109/iitc.2003.1219696
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Film Characterization of Cu diffusion barrier dielectrics for 90 nm and 65 nm technology node Cu interconnects

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Cited by 8 publications
(8 citation statements)
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“…While capping solutions have been extensively studied in standard CMOS technologies (e.g. SiN for corrosion protection [19][20][21], SiCN, SiCO and MnSiO 3 as copper diffusion barrier [22][23][24][25][26][27], CuSi and cobalt cappings to increase reliability performance [28][29][30][31]. .…”
Section: Introductionmentioning
confidence: 99%
“…While capping solutions have been extensively studied in standard CMOS technologies (e.g. SiN for corrosion protection [19][20][21], SiCN, SiCO and MnSiO 3 as copper diffusion barrier [22][23][24][25][26][27], CuSi and cobalt cappings to increase reliability performance [28][29][30][31]. .…”
Section: Introductionmentioning
confidence: 99%
“…͑␣-SiCN͒, and amorphous silicon oxycarbide ͑␣-SiCO͒ deposited by plasma-enhanced chemical vapor deposition ͑PECVD͒ using organosilicate gases have received extensive attention for applications as Cu cap-barrier and ESL in Cu interconnection scheme because of their lower k value, better etching selectivity with organosilicate glass ͑OSG͒, robust chemical mechanical polishing ͑CMP͒ strength, good photoresist poisoning resistance, higher antireflective ability, and superior properties as a Cu barrier/passivation layer in terms of Cu restraint, electromigration resistance, and Cu hillock density. [1][2][3][4][5][6] The fine-tuned ␣-SiC is better than ␣-SiCN and ␣-SiCO in the aspects of k value, etching selectivity, photoresist poisoning, antireflective coating lithography behavior, adhesion strength to Cu and OSG IMD, electrical property, and reliability performance. 2,3,7 However, the film stress of ␣-SiC is tensile or less compressive as compared with that of ␣-SiCN and ␣-SiCO, which results in a poor stack stability of Cu-OSG interconnect system and a degraded interface quality of ␣-SiC/OSG.…”
mentioning
confidence: 98%
“…[1][2][3][4][5][6] The fine-tuned ␣-SiC is better than ␣-SiCN and ␣-SiCO in the aspects of k value, etching selectivity, photoresist poisoning, antireflective coating lithography behavior, adhesion strength to Cu and OSG IMD, electrical property, and reliability performance. 2,3,7 However, the film stress of ␣-SiC is tensile or less compressive as compared with that of ␣-SiCN and ␣-SiCO, which results in a poor stack stability of Cu-OSG interconnect system and a degraded interface quality of ␣-SiC/OSG. 2,3,8 In this work, we investigated the improvement in leakage current and breakdown field of the copper metal-insulator-semiconductor ͑Cu-MIS͒ and Cu-comb capacitors with an ␣-SiCO dielectric barrier over those with an ␣-SiC dielectric barrier having a comparable compressive film stress.…”
mentioning
confidence: 98%
“…1,2 There are studies on 3MS-based ␣-SiC and ␣-SiCN barriers which show k values in the range of 4 to 5, 1-5 while the ␣-SiCO barriers deposited using tetramethylsilane ͑4MS͒, hexamethydisiloxane ͑HMDSO͒ or trimethoxysilane ͑TMOS͒ precursor exhibit an even lower k value of 3.9. [6][7][8] Moreover, it has been reported that the ␣-SiCO barrier film deposited using 3MS precursor and He carrier gas with an addition of O 2 exhibits a k value of 3.7 under an optimal process condition. 9 In this work, we investigated the thermal stability and physical and barrier properties for four ␣-SiC and ␣-SiCO dielectric barrier films, with dielectric constants between 3.7 and 4.4, deposited using trimethylsilane ͑3MS͒ precursor and He carrier gas with various CO 2 flow rates.…”
mentioning
confidence: 99%