Film Characterization of Cu diffusion barrier dielectrics for 90 nm and 65 nm technology node Cu interconnects

Goto, Kyoko; Yuasa, Hiroyasu; Andatsu, A.; Matsuura, M.

doi:10.1109/iitc.2003.1219696

Cited by 8 publications

(8 citation statements)

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“…While capping solutions have been extensively studied in standard CMOS technologies (e.g. SiN for corrosion protection [19][20][21], SiCN, SiCO and MnSiO 3 as copper diffusion barrier [22][23][24][25][26][27], CuSi and cobalt cappings to increase reliability performance [28][29][30][31]. .…”

Section: Introductionmentioning

confidence: 99%

Vapor deposited thin organic–inorganic capping layers preventing copper line oxidation in polymer-based RDL technologies

Chery

Lin²,

Grimes³

et al. 2022

Microelectronic Engineering

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Section: Introductionmentioning

confidence: 99%

Vapor deposited thin organic–inorganic capping layers preventing copper line oxidation in polymer-based RDL technologies

Chery

Lin²,

Grimes³

et al. 2022

Microelectronic Engineering

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“…͑␣-SiCN͒, and amorphous silicon oxycarbide ͑␣-SiCO͒ deposited by plasma-enhanced chemical vapor deposition ͑PECVD͒ using organosilicate gases have received extensive attention for applications as Cu cap-barrier and ESL in Cu interconnection scheme because of their lower k value, better etching selectivity with organosilicate glass ͑OSG͒, robust chemical mechanical polishing ͑CMP͒ strength, good photoresist poisoning resistance, higher antireflective ability, and superior properties as a Cu barrier/passivation layer in terms of Cu restraint, electromigration resistance, and Cu hillock density. [1][2][3][4][5][6] The fine-tuned ␣-SiC is better than ␣-SiCN and ␣-SiCO in the aspects of k value, etching selectivity, photoresist poisoning, antireflective coating lithography behavior, adhesion strength to Cu and OSG IMD, electrical property, and reliability performance. 2,3,7 However, the film stress of ␣-SiC is tensile or less compressive as compared with that of ␣-SiCN and ␣-SiCO, which results in a poor stack stability of Cu-OSG interconnect system and a degraded interface quality of ␣-SiC/OSG.…”

mentioning

confidence: 98%

“…[1][2][3][4][5][6] The fine-tuned ␣-SiC is better than ␣-SiCN and ␣-SiCO in the aspects of k value, etching selectivity, photoresist poisoning, antireflective coating lithography behavior, adhesion strength to Cu and OSG IMD, electrical property, and reliability performance. 2,3,7 However, the film stress of ␣-SiC is tensile or less compressive as compared with that of ␣-SiCN and ␣-SiCO, which results in a poor stack stability of Cu-OSG interconnect system and a degraded interface quality of ␣-SiC/OSG. 2,3,8 In this work, we investigated the improvement in leakage current and breakdown field of the copper metal-insulator-semiconductor ͑Cu-MIS͒ and Cu-comb capacitors with an ␣-SiCO dielectric barrier over those with an ␣-SiC dielectric barrier having a comparable compressive film stress.…”

mentioning

confidence: 98%

Improvement in Leakage Current and Breakdown Field of Cu-Comb Capacitor Using a Silicon Oxycarbide Dielectric Barrier

Chiang

Chen

et al. 2004

J. Electrochem. Soc.

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This work investigates in the first place, the improvement in leakage current and breakdown field of the copper metal-insulatorsemiconductor ͑Cu-MIS͒ capacitor with a plasma-enhanced chemical vapor deposited ͑PECVD͒ amorphous silicon oxycarbide ͑␣-SiCO, k ϭ 3.7) dielectric barrier. This is followed by investigating the improvement in leakage current and breakdown field of the Cu-comb capacitor with a carbon-doped low-k PECVD organosilicate glass (k ϭ 3) as the intermetal dielectric and an ␣-SiCO dielectric film as the Cu cap barrier. The leakage current and breakdown field of Cu-MIS and Cu-comb capacitors are dependent on the species of the dielectric barrier. The Cu-MIS and Cu-comb capacitors with an ␣-SiCO dielectric barrier exhibit a leakage current at least three orders of magnitude smaller than those with an amorphous silicon carbide ͑␣-SiC, k ϭ 4.4) dielectric barrier at an applied electric field of 1.6 MV/cm between 25 and 250°C. Moreover, the breakdown field of the Cu-MIS and Cu-comb capacitors with an ␣-SiCO dielectric barrier, measured at 200°C, are 60 and 25%, respectively, higher than that of the capacitors with an ␣-SiC barrier. The decreased leakage current and increased breakdown field of the Cu-MIS and Cu-comb capacitors with an ␣-SiCO dielectric barrier are attributed to the higher density, oxygen-improved film property, nonsemiconductor behavior, and lower fringe-or surface-electric field of the ␣-SiCO dielectric film.

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“…1,2 There are studies on 3MS-based ␣-SiC and ␣-SiCN barriers which show k values in the range of 4 to 5, 1-5 while the ␣-SiCO barriers deposited using tetramethylsilane ͑4MS͒, hexamethydisiloxane ͑HMDSO͒ or trimethoxysilane ͑TMOS͒ precursor exhibit an even lower k value of 3.9. [6][7][8] Moreover, it has been reported that the ␣-SiCO barrier film deposited using 3MS precursor and He carrier gas with an addition of O 2 exhibits a k value of 3.7 under an optimal process condition. 9 In this work, we investigated the thermal stability and physical and barrier properties for four ␣-SiC and ␣-SiCO dielectric barrier films, with dielectric constants between 3.7 and 4.4, deposited using trimethylsilane ͑3MS͒ precursor and He carrier gas with various CO 2 flow rates.…”

mentioning

confidence: 99%

Physical and Barrier Properties of PECVD Amorphous Silicon-Oxycarbide from Trimethylsilane and CO[sub 2]

Chiang

Chen

et al. 2004

J. Electrochem. Soc.

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This work investigates the thermal stability and physical and barrier properties of amorphous silicon-carbide ͑␣-SiC͒ and amorphous silicon-oxycarbide ͑␣-SiCO͒ dielectric barriers deposited by plasma-enhanced chemical vapor deposition ͑PECVD͒ using trimethylsilane ͑3MS͒ precursor and He carrier gas. Films were deposited without and with various CO 2 flow rates. The dielectric constant of the ␣-SiCO films decreased with increasing CO 2 flow rate. Increasing CO 2 flow rate also promotes better thermal stability, higher breakdown field, lower leakage current, and superior resistance to Cu diffusion through the films. The improved barrier property is attributed to the denser and less porous structure of the ␣-SiCO dielectric barrier upon CO 2 addition. The ␣-SiCO barrier films deposited with the large ͑1200 sccm͒ CO 2 flow rate exhibit the low k value of 3.7, thermal stability up to 550°C, room-temperature breakdown field of 8 MV/cm and leakage current densities of 10 Ϫ7 to 10 Ϫ6 A/cm 2 at 3 MV/cm, and a superb Cu barrier property.To reduce the interconnect resistance-capacitance ͑RC͒ timedelay, a dominant factor in determining the performance of ultralarge scale integrated ͑ULSI͒ circuits, it is inevitable to use copper ͑Cu͒ metal to replace aluminum ͑Al͒ and its alloys in integrated circuits as the multilevel interconnect material and low dielectric constant ͑low-k͒ dielectric materials instead of the conventional SiO 2 film. Cu is the most suitable interconnect metal because of its low electrical resistivity and excellent electromigration resistance, and the use of low-k materials as the inter-and intra-layer dielectrics ͑ILD͒ can reduce the signal-propagation delay, crosstalk-noise between metal lines, and power dissipation of integrated circuits. While many low-k (k Ͻ 3) dielectric materials have been used as ILDs, high dielectric constant (k Ͼ 7) silicon nitride is still the primary candidate for the Cu cap-barrier and etching stop layer required in the Cu damascene structure. It is desirable to replace silicon nitride with dielectric materials of lower k value (k Ͻ 5) to further reduce the effective dielectric constant of the Cu interconnect system. In recent years, amorphous silicon-carbide ͑␣-SiC͒ and amorphous silicon-nitricarbide ͑␣-SiCN͒ deposited by plasmaenhanced chemical vapor deposition ͑PECVD͒ using organosilicate gases are receiving extensive attention for applications as Cu capbarrier and etching stop layer in Cu damascene structures because of their lower k value, better etching selectivity with respect to organosilicate glass ͑OSG͒, excellent chemical mechanical polishing ͑CMP͒ strength, and superb property as Cu barrier and passivation layer in terms of electromigration resistance and Cu hillock density. 1,2 There are studies on 3MS-based ␣-SiC and ␣-SiCN barriers which show k values in the range of 4 to 5, 1-5 while the ␣-SiCO barriers deposited using tetramethylsilane ͑4MS͒, hexamethydisiloxane ͑HMDSO͒ or trimethoxysilane ͑TMOS͒ precursor exhibit an even lower k value of 3.9. 6-8 Moreover, it ...

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Film Characterization of Cu diffusion barrier dielectrics for 90 nm and 65 nm technology node Cu interconnects

Cited by 8 publications

References 0 publications

Vapor deposited thin organic–inorganic capping layers preventing copper line oxidation in polymer-based RDL technologies

Vapor deposited thin organic–inorganic capping layers preventing copper line oxidation in polymer-based RDL technologies

Improvement in Leakage Current and Breakdown Field of Cu-Comb Capacitor Using a Silicon Oxycarbide Dielectric Barrier

Physical and Barrier Properties of PECVD Amorphous Silicon-Oxycarbide from Trimethylsilane and CO[sub 2]

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