Film Characteristics of Low-Temperature Plasma-Enhanced Chemical Vapor Deposition Silicon Dioxide Using Tetraisocyanatesilane and Oxygen

Idris, Irman; Sugiura, Osamu

doi:10.1143/jjap.37.6562

Cited by 25 publications

(15 citation statements)

References 33 publications

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“…Normally, the quality and density of PECVD SiO 2 differ from thermally grown SiO 2 . 41,42 For SiO 2 thin films, the elastic modulus was found to be dependent upon thin-film synthesis processes. PECVD SiO 2 thin films usually exhibit a higher elastic modulus than thermally grown ones.…”

Section: Fig 3 ͑Color Online͒ ͑A͒mentioning

confidence: 99%

Elastic modulus of amorphous SiO2 nanowires

Gao

2006

Applied Physics Letters

146

106

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Amorphous SiO2 nanowires with diameter ranging from 50 to 100 nm were synthesized using chemical vapor deposition (CVD) under an argon atmosphere at atmospheric pressure. Nanoscale three-point bending tests were performed directly on individual amorphous SiO2 nanowires using an atomic force microscope (AFM). Elastic modulus of the amorphous SiO2 nanowires was measured to be 76.6±7.2GPa, which is close to the reported value of the bulk SiO2 and thermally grown SiO2 thin films, but lower than that of plasma-enhanced CVD SiO2 thin films. The amorphous SiO2 nanowires exhibit brittle fracture failure in bending.

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Section: Fig 3 ͑Color Online͒ ͑A͒mentioning

confidence: 99%

Elastic modulus of amorphous SiO2 nanowires

Gao

2006

Applied Physics Letters

146

106

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“…The deposited SiO 2 was of very high quality and equivalent to thermal oxide after annealing at 1000°C. 12 The interface charge trap density was about 8ϫ10 10 cm Ϫ2 eV Ϫ1 and positive fixed oxide charge density in the oxide was about 2ϫ10 11 cm Ϫ2 . Contact pads and gate electrodes were fabricated by a lift-off process using aluminum metal.…”

Section: A Fabrication Of Devicesmentioning

confidence: 97%

Electron-beam direct writing using RD2000N for fabrication of nanodevices

Dutta

Lee

Hayafune

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A simple but potent method for electron-beam (EB) direct writing is introduced. This method is based on the use of negative electron-beam resist RD2000N. The resist offers high sensitivity to EB exposure and high resistance to halide plasma etching conditions, which is ideal for application in Si/SiO2 based nanodevice fabrication. Dot exposure shows that dots of a minimum diameter of 16 nm could be patterned using this resist. Linear arrays of dots, connected to each other by very narrow constrictions, are patterned using this resist. When transferred to a thin silicon-on-insulator layer, by reactive ion etching, this structure forms a multiple tunnel junction. Memory devices based on this multiple tunnel junction are fabricated. Memory operation is observed at 20 K.

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“…The temperature-dependent materials properties of the PdCo alloy were derived using the behavior of similar alloys [10] transposed onto point data [15]. The material properties of the various common passivation materials considered [16] (Table 1) are from the element library of COMSOL for SiO 2 and Si 3 N 4 , and from literature for low-temperature plasma-enhanced chemical vapor deposition SiO 2 [2,17] and Si 3 N 4 [18]. The “ON” and “OFF” states of the device are represented via interchangeable sets of materials properties for the CoFeB layers [4,13] (Fig.…”

Section: Computational Detailsmentioning

confidence: 99%

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

Deschenes¹,

Muneer²,

Akbulut³

et al. 2016

Beilstein J. Nanotechnol.

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Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM). Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We compare self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. The highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ), most of the heat is dissipated on the lower potential side of the magnetic junction. This asymmetry in heating, which has also been observed experimentally, is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.

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Film Characteristics of Low-Temperature Plasma-Enhanced Chemical Vapor Deposition Silicon Dioxide Using Tetraisocyanatesilane and Oxygen

Cited by 25 publications

References 33 publications

Elastic modulus of amorphous SiO2 nanowires

Elastic modulus of amorphous SiO2 nanowires

Electron-beam direct writing using RD2000N for fabrication of nanodevices

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

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