Filling of micron-sized contact holes with copper by energetic cluster impact

Abstract

A completely ionized and clustered beam of Mo or Cu is deposited with variable kinetic energy on a substrate, and the filling of micron-sized contact holes on semiconductor devices is studied. An excellent hole filling is obtained for the impact of charged copper clusters, if they contain 1000–3000 Cu atoms and impinge with a kinetic energy of about 10 eV per atom on a substrate having a temperature of 500 K. The morphology of small hole fillings by slow and energetic cluster impact is discussed.

Magnetism of Co nanocluster films

“…[10][11][12][13][14] The clusters land softly on the surface of a Si ͑100͒ substrate at room temperature simultaneously along with an atomic beam of Cu or SiO 2 from a magnetronsputtering gun. This results in the embedding of Co clusters in a Cu or SiO 2 matrix.…”

Instability of Ag nanoparticles in SiO2at ambient conditions

“…The experimental setup has been described elsewhere [11] and will only be sketched briefly. Atomic or cluster ions are generated in the gas phase in a magnetron cluster source following the design of Haberland et al [13]. The ion beam is characterized and optimized by time-of-flight mass spectrometry (TOF-MS) and afterwards directed towards the deposition chamber.…”

Interaction effects in dilute cluster-assembled magnetic nanostructures

“…The experimental setup is described in detail elsewhere 24 and is only sketched briefly. Cobalt cluster ions are generated in the gas phase using a homebuilt magnetron cluster source ͑based on the principle introduced by Haberland et al 25 ͒ and guided by ion optics through several differential pumping stages toward the deposition chamber. The beam can be directed either toward a time-of-flight mass spectrometer for cluster size determina-tion, beam characterization, and optimization or into a quadrupole mass spectrometer in front of the substrate surface ͑conductive polyimide, negligible parallel conductivity͒.…”