Filamentary model of bipolar resistive switching in capacitor-like memristive nanostructures on the basis of yttria-stabilised zirconia

Гусейнов, Д. В.; Tetelbaum, D. I.; Mikhaylov, A. N.; Белов, А. И.; Шенина, М. Е.; Королев, Д. С.; Антонов, И. Н.; Касаткин, А. П.; Горшков, О. Н.; Okulich, E. V.; Okulich, V.I.; Bobrov, A. I.; Малехонова, Н. В.; Павлов, Д. А.; Gryaznov, E.G.

doi:10.1504/ijnt.2017.083436

Cited by 27 publications

(15 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The SET time is of the order of microseconds for voltages around 3 V in agreement with the voltage-time dilemma [35]. When the current is calculated for the simulated distributions of vacancies in the gap between filament and bottom electrode [30], an abrupt drop in current during the RESET transition is revealed (Fig. 13).…”

Section: Kinetic Monte-carlo Simulationsupporting

confidence: 69%

“…It is worth noting that the electrode/oxide interfaces are not flat and the roughness generally correlates with the grain boundaries (Fig. 8) [30]. After EF and switching, a redistribution of oxygen in the film and a certain improvement of the contrast of the grain boundaries are observed.…”

Section: Structure and Electronic Properties Of The Used Oxides And Cmentioning

confidence: 97%

“…The modelling volume is represented by a cylinder around the bump of the top electrode corresponding to its surface roughness (Fig. 11) [30]. This metallic bump is the initial electric field concentrator and acts as a filament nucleus.…”

Section: Kinetic Monte-carlo Simulationmentioning

confidence: 99%

See 2 more Smart Citations

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Mikhaylov

Gryaznov

Belov

et al. 2016

Phys. Status Solidi C

View full text Add to dashboard Cite

The breakthrough in electronics and information technology is anticipated by the development of emerging memory and logic devices, artificial neural networks and brain-inspired systems on the basis of memristive nano-materials represented, in a particular case, by a simple 'metal-insulator-metal' (MIM) thin-film structure. The present article is focused on the comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering. The studied memristive devices demonstrate reproducible change in their resistance (resistive switching - RS) originated from the formation and rupture of conductive pathways (filaments) in oxide films due to the electric-field-driven migration of oxygen vacancies and/or mobile oxygen ions. It is shown that, for both ionic and covalent oxides under study, the RS behaviour depends only weakly on the oxide film composition and thickness, device geometry (down to a device size of about 20x20 mu m(2)). The devices under study are found to be tolerant to ion irradiation that reproduces the effect of extreme fluences of high-energy protons and fast neutrons. This common behaviour of RS is explained by the localized nature of the redox processes in a nanoscale switching oxide volume. Adaptive (synaptic) change of resistive states of memristive devices is demonstrated under the action of single or repeated electrical pulses, as well as in a simple model of coupled (synchronized) neuron-like generators. It is concluded that the noise-induced phenomena cannot be neglected in the consideration of a memristive device as a nonlinear system. The dynamic response of a memristive device to periodic signals of complex waveform can be predicted and tailored from the viewpoint of stochastic resonance concept. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

show abstract

Section: Kinetic Monte-carlo Simulationsupporting

confidence: 69%

Section: Structure and Electronic Properties Of The Used Oxides And Cmentioning

confidence: 97%

See 1 more Smart Citation

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Mikhaylov

Gryaznov

Belov

et al. 2016

Phys. Status Solidi C

View full text Add to dashboard Cite

show abstract

“…Yttria stabilized zirconia (YSZ) ZrO 2 (Y) is a promising material for the memristor devices [10][11][12][13]. It is featured by a high concentration of oxygen vacancies that provides the high anion mobility [14].…”

Section: Introductionmentioning

confidence: 99%

“…This intrinsic property of YSZ opens a way to a precise control of the oxygen vacancy concentration by varying the molar fraction of Y 2 O 3 (the vacancy concentration is 1/2 that of the Y atoms). To date, the prototype memristor devices based on the YSZ films have been fabricated and demonstrated a good durability (up to 10 7 SET/RESET cycles) [12,13].…”

Section: Introductionmentioning

confidence: 99%

Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory

Тихов

Горшков

Антонов

et al. 2018

Advances in Condensed Matter Physics

View full text Add to dashboard Cite

We report the investigations of the ion migration polarization in the yttria stabilized zirconia (YSZ) thin films in the Metal-Oxide-Metal (MOM) and Metal-Oxide-Semiconductor (MOS) stacks due to the drift of the oxygen vacancies under the external bias voltage applied between the electrodes. The parameters characterizing the drift of the oxygen vacancies in YSZ such as the ion drift activation energy, mobile ion concentration, and the drift mobility have been determined in the temperature range 300–500 K. These data are important for deeper understanding of the fundamental mechanisms of the electroforming and resistive switching in the YSZ-based MOM and MOS stacks, which are promising for the Resistive Random Access Memory (RRAM) and other memristor device applications.

show abstract

A Voltage‐Driven Transport Model to Identify Ion Migration as the Rate‐Limiting Step in Memristive Switching

Vazquez‐Arce,

Molina‐Reyes,

Contreras

et al. 2023

Adv Elect Materials

View full text Add to dashboard Cite

The physics behind the switching kinetics of memristors is gradually becoming clearer. The periods required for the onset of electromigration within memristors and the activation or deactivation of the low‐resistance state—referred to as the incubation and switching times—exhibit non‐linearity with applied voltage. This behavior prevails depending on the rate‐limiting step comprising nucleation and filament growth, electron transfer at the electrode/electrolyte interface, and ion migration through the electrolyte. Herein, a model is introduced for ion migration as the rate‐limiting step. This model analyses the incubation time and analytically correlates it with the electric field, diffusion coefficient, and temperature, facilitating the determination of threshold voltage and diffusivity from high to low resistance states for ion migration as the rate‐limiting step. By exploring parallel plate cells with Yttria‐Stabilized Zirconia (YSZ) of nanometer thickness, the application of the model is illustrated and the fundamental equations are applied to outstanding memristive cells in the literature. The applicability of this model to cells of various charge carriers is proposed, ranging from vacancies and electron transport to oxygen ions and metal cations, denoting its potential importance.

show abstract

Filamentary model of bipolar resistive switching in capacitor-like memristive nanostructures on the basis of yttria-stabilised zirconia

Cited by 27 publications

References 0 publications

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory

A Voltage‐Driven Transport Model to Identify Ion Migration as the Rate‐Limiting Step in Memristive Switching

Contact Info

Product

Resources

About