Field tuning of domain-wall type and chirality in 
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Roy, Debangsu; Davidovitch, Sagi; Hung, Yu-Ming; Schultz, Moty; Albright, Stephen D.; Morales-Acosta, M. D.; Walker, Frederick J.; Reiner, J. W.; Ahn, Charles; Kent, Andrew D.; Klein, Lior

doi:10.1103/physrevb.95.224437

Cited by 3 publications

(3 citation statements)

References 18 publications

(7 reference statements)

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“…First, the medium materials in SRO heterostructures range from complex oxides [34][35][36][37][38][39][40] to metals [41], semiconductors [42] and even two-dimensional (2D) materials [43]. Also, the rich physical properties including high metallic conductivity [23,24], tunable magnetic anisotropy [12,40,44], AHE [22,25,26], magnetic domain walls [45,46], Dzyaloshinskii-Moriya interaction (DMI) [28][29][30], strong SOC strength [22,25,26], variable T C [47] and Weyl fermions [15,27], etc, have also been gradually excavated in SRO-based heterostructures. Finally, in order to effectively control physical properties in heterostructures, various controlling ways have been utilized to modulate the physical properties, including magnetic field [48,49], strain field [50][51][52], electric-field [29,30,[53][54][55], electric-current [12,56], optical [52,57,58]…”

Section: Introductionmentioning

confidence: 99%

An overview of SrRuO₃-based heterostructures for spintronic and topological phenomena

Gu¹,

Wang²,

Hu³

et al. 2022

J. Phys. D: Appl. Phys.

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SrRuO3 (SRO)-based heterostructures have attracted much attention for potential applications such as electrodes, oxide spintronics, topological electronics and electrocatalytic function mainly due to the strong spin-orbit coupling, itinerant ferromagnetism with 4d electrons, high metallic conductivity, perpendicular magnetic anisotropy and rich oxygen octahedral distortion of SRO. Here, this work aims to offer a timely and systematic review on SRO-based heterostructures for its emerging opportunities in oxide spintronic and topological electronic applications. We first present a brief summary of the current status in SRO-based heterostructures and describe the motivations of this review. We then briefly review the surface and interface modulation in SRO-based heterostructures, including oxygen octahedral distortions (antiferrodistortive mode and ferroelectric mode) engineering and ion defect engineering. In the third part, we discuss the spin-charge interconversion phenomena in SRO-based heterostructures, covering the inverse spin Hall effect and current-induced spin-orbit torques. Particularly, in the fourth part, we discuss the emergent topological Hall effect and underlying mechanism in SRO-based heterostructures, including the two-channel anomalous Hall effect and Berry phase manipulation. The fifth part presents the magnetic Weyl fermions and its electric-field control of SRO films. We finally conclude with a discussion of challenges and prospects of SRO-based heterostructures, which provides a guidance for exploring novel physical properties and designing multifunctional devices based on SRO.

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Section: Introductionmentioning

confidence: 99%

An overview of SrRuO₃-based heterostructures for spintronic and topological phenomena

Gu¹,

Wang²,

Hu³

et al. 2022

J. Phys. D: Appl. Phys.

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“…by angle resolved photo‐electron spectroscopy (ARPES). [ 1–9 ] The perovskites SrIrO 3 and SrRuO 3 were shown to exhibit a strong spin Hall effect [ 10,11 ] and to be effective materials for the shifting of magnetic domain walls by electrical currents, [ 12–14 ] respectively. Furthermore, the delafossites PdCoO 2 and PtCoO 2 turned out to be among the most conductive oxides.…”

Section: Introductionmentioning

confidence: 99%

“…

currents, [12][13][14] respectively. Furthermore, the delafossites PdCoO 2 and PtCoO 2 turned out to be among the most conductive oxides.

…”

mentioning

confidence: 98%

Atomic Layer Deposition of the Conductive Delafossite PtCoO₂

Hagen

Yoon

Zhang

et al. 2022

Adv Materials Inter

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The first atomic layer deposition process for a ternary oxide is reported, which contains a metal of the platinum group, the delafossite PtCoO2. The deposition with the precursors trimethyl‐Pt‐methylcyclopentadienyl, Co‐bis(N‐t‐butyl‐N′‐ethylpropanimidamidate), and oxygen plasma results in a process with a nearly constant growth rate and stoichiometric composition over a wide temperature window from 100 to 320 °C. Annealing of the as‐deposited amorphous films in an oxygen atmosphere in a temperature window from 700 to 800 °C leads to the formation of the delafossite phase. Very thin films show a pronounced preferred orientation with the Pt sheets being almost parallel to the substrate surface while arbitrary orientation is observed for thicker films. The conformal coating of narrow trenches highlights the potential of this atomic‐layer‐deposition process. Moreover, heterostructures with magnetic films are fabricated to demonstrate the potential of PtCoO2 for spintronic applications.

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Calculation of domain wall resistance in magnetic nanowire

Boonruesi

Chureemart

2019

Applied Physics Letters

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The enhancement of domain wall resistance (DWR) in spintronic devices containing the domain wall is required for a full understanding since it represents the efficiency of spin transport and contributes to magnetoresistance phenomena. In this work, we theoretically investigate the effect of the domain wall width, injected current density, and temperature on DWR in magnetic nanowire by using the generalized spin accumulation model based on the Zhang, Levy, and Fert approach. The proposed model allows us to deal with a multilayer system with arbitrary orientation of magnetization. In addition, the temperature effect can be taken into account by considering the spin-dependent resistivity of the ferromagnet at any finite temperature. This leads to the calculation of temperature variation of spin transport parameters, and it eventually allows us to calculate the thermal effect on spin accumulation. The spin transport behavior and DWR can be calculated directly from the gradient of spin accumulation and spin current within the wall. The results show the increase in DWR with temperature as the thermal effect causes the reduction of transport parameters.

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Field tuning of domain-wall type and chirality in SrRuO3

Cited by 3 publications

References 18 publications

An overview of SrRuO₃-based heterostructures for spintronic and topological phenomena

An overview of SrRuO₃-based heterostructures for spintronic and topological phenomena

Atomic Layer Deposition of the Conductive Delafossite PtCoO₂

Calculation of domain wall resistance in magnetic nanowire

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Field tuning of domain-wall type and chirality in SrRuO3

Cited by 3 publications

References 18 publications

An overview of SrRuO3-based heterostructures for spintronic and topological phenomena

An overview of SrRuO3-based heterostructures for spintronic and topological phenomena

Atomic Layer Deposition of the Conductive Delafossite PtCoO2

Calculation of domain wall resistance in magnetic nanowire

Contact Info

Product

Resources

About

An overview of SrRuO₃-based heterostructures for spintronic and topological phenomena

An overview of SrRuO₃-based heterostructures for spintronic and topological phenomena

Atomic Layer Deposition of the Conductive Delafossite PtCoO₂