Field-Plated NiO/Ga<sub>2</sub>O<sub>3</sub> p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors

Gong, Haigang; Wang, Zhengpeng; Yu, Xinxin; Ren, Fangfang; Yang, Yi; Lv, Yuanjie; Feng, Zhihong; Gu, Shulin; Zhang, Rong; Zheng, Yi; Ye, Jiandong

doi:10.1109/jeds.2021.3130305

Cited by 16 publications

(7 citation statements)

References 25 publications

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“…It is also reported that the performance of the β-Ga 2 O 3 pn heterojunction is significantly affected by deep-level traps inside the devices [17][18][19]. By reducing the deep-level trap concentration, improved performance was obtained in the NiO/β-Ga 2 O 3 p-n heterojunction, including a reduced ideality factor and an enlarged reverse blocking voltage [17].…”

Section: Introductionmentioning

confidence: 97%

Investigation of a minority carrier trap in a NiO/β-Ga₂O₃ p–n heterojunction via deep-level transient spectroscopy

Qu,

Chen,

Zhang

et al. 2023

Semicond. Sci. Technol.

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Properties of a minority carrier (hole) trap in β-Ga2O3 have been explicitly investigated using a NiO/β-Ga2O3 p-n heterojunction. By deep level transient spectroscopy (DLTS), activation energy for emission (Eemi ) and hole capture cross section (σp ) were derived to be 0.1 eV and 2.48×10-15 cm2, respectively. Temperature-enhanced capture and emission kinetics were revealed by the decrease of capture time constant (τc ) and emission time constant (τe ). Moreover, it was determined that emission process of the minority carrier trap is electric-field-independent. Taking carrier recombination into account, corrected trap concentration (NTa ) of 2.73×1015 cm-3 was extracted, together with electron capture cross section (σn ) of 1.42×10-18 cm2. This study provides a foundation for comprehending trap properties in β-Ga2O3, which is crucial to overcoming self-trapped hole (STH) effects in obtaining p-type β-Ga2O3 materials and performance enhancement of β-Ga2O3-based power devices.

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Section: Introductionmentioning

confidence: 97%

Investigation of a minority carrier trap in a NiO/β-Ga₂O₃ p–n heterojunction via deep-level transient spectroscopy

Qu,

Chen,

Zhang

et al. 2023

Semicond. Sci. Technol.

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“…[29] However, there is very little work on optimizing this heterojunction performance for hightemperature applications which is currently limited to 275 °C. [30] In this work, we demonstrate fabrication, characterization, and modeling of NiO/β-Ga 2 O 3 heterojunctions for hightemperature applications up to 410 °C. Textured polycrystalline p-NiO layers are grown using pulsed laser deposition (PLD) on single-crystal n-type β-Ga 2 O 3 without any drift layer, patterned using a reactive ion etch (RIE) process, and subjected to a high-temperature annealing step.…”

Section: Introductionmentioning

confidence: 99%

“…[ 29 ] However, there is very little work on optimizing this heterojunction performance for high‐temperature applications which is currently limited to 275 °C. [ 30 ]…”

Section: Introductionmentioning

confidence: 99%

Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications

Sohel,

Kotecha,

Khan

et al. 2023

Physica Status Solidi (a)

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β‐Ga2O3 based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultra‐wide bandgap of close to 5 eV. However, the high‐temperature operation of these ultra‐wide‐bandgap devices is usually limited by the relatively low 1‐2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Here, we report heterojunction p‐NiO/n‐β‐Ga2O3 diodes fabrication and optimization for high‐temperature device applications, demonstrating a current rectification ratio (ION/IOFF) of more than 106 at 410°C. The NiO heterojunction diode can achieve higher turn‐on (VON) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single crystal β‐Ga2O3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p‐n diodes based on β‐Ga2O3 can significantly improve high‐temperature electronic device and sensor performance.This article is protected by copyright. All rights reserved.

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“…However, the absence of p-type β-Ga 2 O 3 makes the breakdown voltage (BV) and the BFOM far lower than its theoretical limit. To overcome this challenge and obtain the advantages of p-n junction devices, various p-type oxides have been hetero-integrated with β-Ga 2 O 3 [5,6] , among which NiO with E g of 3.8-4 eV and controllable doping concentration is proved to be greatly suitable for β-Ga 2 O 3 power devices [7,8] . Moreover, great advances have been achieved in BFOM of NiO/β-Ga 2 O 3 power heterojunction FETs [9,10] .…”

Section: Introductionmentioning

confidence: 99%

Experimental investigation on the instability for NiO/β-Ga₂O₃ heterojunction-gate FETs under negative bias stress

Jiang¹,

Li²,

Zhou³

et al. 2023

J. Semicond.

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A NiO/β-Ga2O3 heterojunction-gate field effect transistor (HJ-FET) is fabricated and its instability mechanisms are experimentally investigated under different gate stress voltage (V G,s) and stress times (t s). Two different degradation mechanisms of the devices under negative bias stress (NBS) are identified. At low V G,s for a short t s, NiO bulk traps trapping/de-trapping electrons are responsible for decrease/recovery of the leakage current, respectively. At higher V G,s or long t s, the device transfer characteristic curves and threshold voltage (V TH) are almost permanently negatively shifted. This is because the interface dipoles are almost permanently ionized and neutralize the ionized charges in the space charge region (SCR) across the heterojunction interface, resulting in a narrowing SCR. This provides an important theoretical guide to study the reliability of NiO/β-Ga2O3 heterojunction devices in power electronic applications.

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Field-Plated NiO/Ga₂O₃ p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors

Cited by 16 publications

References 25 publications

Investigation of a minority carrier trap in a NiO/β-Ga₂O₃ p–n heterojunction via deep-level transient spectroscopy

Investigation of a minority carrier trap in a NiO/β-Ga₂O₃ p–n heterojunction via deep-level transient spectroscopy

Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications

Experimental investigation on the instability for NiO/β-Ga₂O₃ heterojunction-gate FETs under negative bias stress

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Field-Plated NiO/Ga2O3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors

Cited by 16 publications

References 25 publications

Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy

Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy

Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications

Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress

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Product

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Field-Plated NiO/Ga₂O₃ p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors

Investigation of a minority carrier trap in a NiO/β-Ga₂O₃ p–n heterojunction via deep-level transient spectroscopy

Investigation of a minority carrier trap in a NiO/β-Ga₂O₃ p–n heterojunction via deep-level transient spectroscopy

Experimental investigation on the instability for NiO/β-Ga₂O₃ heterojunction-gate FETs under negative bias stress