Field induced transient current in one-dimensional nanostructure

Sako, Takeshi; Ishida, Hiroshi

doi:10.1016/j.physe.2018.04.011

Cited by 2 publications

(3 citation statements)

References 52 publications

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“…The N-electron Hamiltonian employed in the present study for modeling an artificial atom with its confinement potential V and a total of M Coulomb impurities is represented in effective atomic units [35] by…”

Section: Artificial Atom With Impuritiesmentioning

confidence: 99%

Distribution of oscillator strengths and correlated electron dynamics in artificial atoms

Honda

Sako

2020

J. Phys. B: At. Mol. Opt. Phys.

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The electronic structure of the quasi-two-dimensional disk-like artificial atom involving holes inside has been studied by the full configuration interaction (FCI) wave function employing mixed basis sets consisting of standard atomic orbitals and anisotropic Gaussian-type functions. The one-particle confinement potential for electrons has been modeled by a sum of an anisotropic harmonic-oscillator potential and attractive Coulomb potentials, the latter being responsible for the hole positive charges. The oscillator strengths from the ground state to a number of low-lying excited states have been calculated by the FCI energies and wave functions for different strength of the harmonic confinement ω. The results for two electrons with a hole at the center, namely, the He-like system, have shown accumulation of the oscillator strengths distributed among different dipole-allowed transitions in the excitation into the center-of-mass modes or the plasmon modes for increasing confinement strength ω. The system of two electrons with two impurity holes, namely, the H2-like system, has been also studied, which has shown a far more complicated trend of the oscillator strengths with respect to ω owing to the additional degree of freedom of the internuclear distance r. The observed trend has been rationalized on the basis of the nodal patterns in the molecular orbitals and in the electron density distributions.

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Section: Artificial Atom With Impuritiesmentioning

confidence: 99%

Distribution of oscillator strengths and correlated electron dynamics in artificial atoms

Honda

Sako

2020

J. Phys. B: At. Mol. Opt. Phys.

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“…The time-dependent Schröinger equation for N-electrons bound in a one-dimensioanl nanostructure with the confining potential V nano modeling a nano-transistor is given in effective atomic units [16] by…”

Section: Hamiltonian For One-dimensional Nano-transistormentioning

confidence: 99%

“…Such timedependent transient transport in nanostructures beyond the linear-response regime has been successfully studied by the master equation approach in which the target nano-object coupled to an external environment is described by a reduced density matrix [13,14] (see also an excellent review of reference [15] and the references therein on this subject). To study transient transport in nanostructures we have employed another approach developed originally in atomic and molecular physics, namely, to solve the time-dependent Schrödinger equation directly relying on the symplectic integrator method with absorbing boundary conditions [16]. Since the timedependent wave function in the real r space as well as in its reciprocal momentum p space is obtained at every time step in this approach, it allows us an insightful visualization of propagation of the transient currents.…”

Section: Introductionmentioning

confidence: 99%

Spin-dependent transient current in transistor-like nanostructures

Asano

Sako²,

Ishida³

2020

J. Phys.: Condens. Matter

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Transient current in transistor-like nanostructures has been studied by a model of a few electrons confined in a one-dimensional effective potential consisting of three quantum wells, 'source', 'gate', and 'drain'. The time-dependent Schrödinger equation for the electrons has been integrated relying on the symplectic integrator method and the transient current has been calculated as the flux of the probability density of electrons absorbed by the complex absorbing potential placed at the far edge of the drain region. The electrons are initially placed in the source domain as their lowest-energy state for a given spin multiplicity and the source-drain current has been calculated for different gate potential heights. The current for different spin configurations has shown strong emission at different values of the gate potential, suggesting use of the studied nanostructures for extracting current with a specific spin configuration from spin-unpolarized normal current. Dependence of the current emission on electron correlation has also been studied by changing the size of the source domain. The current has shown appreciable differences for different spin configurations for the medium and strong confinement regimes, while these differences become smaller for smaller confinement and tend to diminish in the weak limit of confinement. This observed trend has been rationalized on the basis of the formation of the Wigner lattice states.

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Field induced transient current in one-dimensional nanostructure

Cited by 2 publications

References 52 publications

Distribution of oscillator strengths and correlated electron dynamics in artificial atoms

Distribution of oscillator strengths and correlated electron dynamics in artificial atoms

Spin-dependent transient current in transistor-like nanostructures

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