Field-induced topological phase transition from a three-dimensional Weyl semimetal to a two-dimensional massive Dirac metal in 
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Zheng, Guolin; Zhu, Xiangde; Liu, Yequn; Lü, Junxia; Ning, Wei; Zhang, Hongwei; Gao, Wenshuai; Han, Yuyan; Yang, Jiyong; Du, Haifeng; Yang, Kun; Zhang, Yuheng; Tian, Mingliang

doi:10.1103/physrevb.96.121401

Cited by 40 publications

(24 citation statements)

References 48 publications

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“…Here, the strain state of the film is dominated by in-plane compressive strain from the substrate, which can determine magnetic anisotropies [42], but is not expected to change as a function of the magnetic field. Magnetic field induced changes in the AMR have also been observed in Dirac semimetals, such as ZrTe 5 , and attributed topological phase transitions caused by Weyl points that move under the magnetic field [43]. Weyl points also appear in the band structure of EuTiO 3 [21].…”

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confidence: 99%

Anisotropic magnetoresistance in the itinerant antiferromagnetic EuTiO3

Ahadi

Salmani-Rezaie

et al. 2019

Phys. Rev. B

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We report on measurements of the anisotropic magnetoresistance (AMR) of doped EuTiO 3 . It is shown that the primary contribution to the AMR is the crystalline component, which depends on the relative orientation between the magnetic moments and the crystal axes. With increasing magnetic field, a four-fold crystalline AMR undergoes a change in its alignment with respect to the crystal axes. The results are discussed in the context the coupling between spin canting, electronic structure, and transport. We discuss the potential role of Weyl points in the band structure. At high fields, the AMR transitions to uniaxial symmetry, which is lower than that of the lattice, along with a cross-over from positive to negative magnetoresistance.3 Spin-orbit coupling plays a central role in the anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE) [1] of itinerant ferromagnets and in materials with topologically non-trivial electronic states. While an elegant theoretical framework exists for the intrinsic AHE and its connection to the Berry curvature of the electronic bands [2-7], AMR remains comparatively less well understood. Recently, both AMR and AHE have also attracted significant attention in antiferromagnetic metals and semiconductors [8,9]. For example, significant AHEs in non-collinear antiferromagnets have been discovered [10][11][12]. Another phenomenon of recent interest is the potential coupling between the orientation of the Néel vector and the topology of the electronic states in antiferromagnets with symmetry-protected Dirac and/or Weyl points in their band structure [13,14]. Both AHE and AMR can serve as signatures of such interactions [13][14][15].Degenerately doped, antiferromagnetic EuTiO 3 is an interesting testbed for these ideas for several reasons. Despite a small net magnetization, it exhibits an intrinsic AHE that changes sign as a function of the carrier density [16][17][18]. This is indicative of the Fermi level being located near a Weyl point or an avoided crossing, which are sources of Berry curvature [5,7]. Recent density functional calculations (DFT) show the presence of Weyl points, which are near the Fermi level for the doping concentration where the sign changes in the AHE are observed, in case of ferromagnetic order [17]. At zero applied fields, the Eu moments order antiferromagnetically (G-type) [19, 20] with a Néel temperature of ~6 K that is relatively insensitive to the amount of doping [17]. A collinear spin arrangement cannot give rise to Weyl points, because time reversal and inversion symmetry are both present. This can also be seen in DFT calculations (see Supplementary Information [21]). Under applied magnetic fields, however, the spins cant and produce a small net magnetization [17]. The Eu spin orientation can

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confidence: 99%

Anisotropic magnetoresistance in the itinerant antiferromagnetic EuTiO3

Ahadi

Salmani-Rezaie

et al. 2019

Phys. Rev. B

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“…The strong TI of ZrTe5 has been also proposed [21,27]. In addition, more exotic physical properties have been also found in this material, such as Zeeman splitting [20,33,34], Chiral Magnetic effect (CME) [16], 3D Quantum Hall effect (QHE) [35], Anomalous Hall effect (AHE) [36], Giant Planar Hall Effect (PHE) [37], and Discrete Scale Invariance (DSI) [38,39].Considering the extreme sensitivity of the band structure of ZrTe5 to the lattice constant, the above mentioned experimental divergence may be likely due to the difference in sample growth. It is worthwhile noting that the Dirac node of ZrTe5 is not protected by the crystal symmetry, and a band gap can be opened by a perturbation to turn it into topological insulator.…”

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confidence: 81%

Turning ZrTe5 into a semiconductor through atom intercalation

Wang

et al. 2019

Sci. China Phys. Mech. Astron.

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In this work, we use the liquid ammonia method to successfully intercalate potassium atoms into ZrTe5 single crystal, and find a transition from semimetal to semiconductor at low temperature in the intercalated ZrTe5. The resistance anomalous peak is gradually suppressed and finally disappears with increasing potassium concentration. Whilst, the according sign reversal is always observed in the Hall resistance measurement. We tentatively attribute the semimetal-semiconductor transition to the lattice expansion induced by atomic intercalation and thereby a larger energy band gap.Recently, ZrTe5 has attracted increasing attentions because of its mysterious topological nature. DFT calculation predicted that the single-layer ZrTe5 is an ideal two-dimensional topological insulator (2D TI) hosting an indirect band gap of ~0.1 eV [9], but its bulk counterpart resides in proximity of the boundary of topological phase transition from weak to strong TI, through a 3D Dirac semimetal state [9][10][11].Even though great efforts have been devoted to experimentally verify the topological characteristics, the topology of bulk ZrTe5 is still under heavy debate. Either weak TI, strong TI or Dirac semimetal state, has ever been proposed based on the experimental observations with different techniques . The bulk band gap and the topological edge state were detected by ARPES and by STM [14,15,29], which indicates that ZrTe5 is a weak TI. Controversially, signatures of 3D Dirac semimetal were also demonstrated in magnetoresistance [18][19][20]32] and magneto-infrared spectroscopy measurements [12,13,17,24,25]. The strong TI of ZrTe5 has been also proposed [21,27]. In addition, more exotic physical properties have been also found in this material, such as Zeeman splitting [20,33,34], Chiral Magnetic effect (CME) [16], 3D Quantum Hall effect (QHE) [35], Anomalous Hall effect (AHE) [36], Giant Planar Hall Effect (PHE) [37], and Discrete Scale Invariance (DSI) [38,39].Considering the extreme sensitivity of the band structure of ZrTe5 to the lattice constant, the above mentioned experimental divergence may be likely due to the difference in sample growth. It is worthwhile noting that the Dirac node of ZrTe5 is not protected by the crystal symmetry, and a band gap can be opened by a perturbation to turn it into topological insulator. High Pressure was applied to tune ZrTe5 into superconductivity [40], and to induce topological phase transition [41]. The exfoliated ZrTe5 nanosheet shows metallic behavior and tunable resistance maximum, which can be ascribed to the thickness-dependent band structure [42,43]. Up to now, most of the explored ZrTe5 bulk samples, grown by CVT method, behave as metallic

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“…Meanwhile, the topological properties of ZrTe5 crystals are in debate among strong topological insulator (TI), weak TI and Dirac/Weyl semimetal 25 . Although ambiguous in the classification, it has attracted much attention recently due to various exotic experimental discoveries [26][27][28][29][30][31][32][33] . In this paper, we investigate the transversal magneto-thermoelectrical properties of ZrTe5 at various temperatures.…”

Section: Introductionmentioning

confidence: 99%

Giant Nernst effect and field-enhanced transversal zNT in ZrTe5

et al. 2021

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Thermoelectric materials can recover electrical energy from waste heat and vice versa, which are of great significance in green energy harvesting and solid state refrigerator. The thermoelectric figure of merit (zT) quantifies the energy conversion efficiency, and a large Seebeck or Nernst effect is crucial for the development of thermoelectric devices. Here we present a significantly large Nernst thermopower in topological semimetal ZrTe5, which is attributed to both strong Berry curvature and bipolar transport. The largest in-plane 𝑆 𝑥𝑦 (when B//b) approaches 1900 𝜇𝑉/𝐾 at T=100K and B=13T, and the out-of-plane 𝑆 𝑥𝑧 (when B//c) reaches 5000 𝜇𝑉/𝐾. As a critical part of 𝑧 𝑁 𝑇, the linearly increased in-plane 𝑆 𝑥𝑦 and resistivity 𝜌 𝑦𝑦 regard to B induces an almost linear increasing transversal 𝑧 𝑁 𝑇 without saturate under high fields. The maximum 𝑧 𝑁 𝑇 of 0.12 was obtained at B=13 T and T= 120K, which significantly surmounts its longitudinal counterpart under the same condition.

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Field-induced topological phase transition from a three-dimensional Weyl semimetal to a two-dimensional massive Dirac metal in ZrTe5

Cited by 40 publications

References 48 publications

Anisotropic magnetoresistance in the itinerant antiferromagnetic EuTiO3

Anisotropic magnetoresistance in the itinerant antiferromagnetic EuTiO3

Turning ZrTe5 into a semiconductor through atom intercalation

Giant Nernst effect and field-enhanced transversal zNT in ZrTe5

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