Field-Induced Nonlinearities in Silicon Waveguides Embedded in Lateral p-n Junctions

Castellan, Claudio; Franchi, Riccardo; Biasi, Stefano; Bernard, Martino; Ghulinyan, Mher; Pavesi, L.

doi:10.3389/fphy.2019.00104

Cited by 10 publications

(5 citation statements)

References 25 publications

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“…The influence of the trapping properties of the silicon nitride cover layer was also demonstrated [11] and, regarding the second harmonic experiments, it was proposed that the measured non-linear responses could have arisen not from the silicon material itself but rather from the cover layer [12] or due to the trapped charges inside it Manuscript received February 8, 2021; revised --, -. [13]. Therefore, all the experimental evidence suggested that the Pockels effect was much weaker than initially thought.…”

Section: Introductionmentioning

confidence: 91%

A SiGe Slot Approach for Enhancing Strain Induced Pockels Effect in the Mid-IR Range

Olivares

Sanchís

2021

IEEE Photon. Technol. Lett.

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Strained silicon was proposed more than a decade ago promising to revolutionize the silicon photonics field by allowing efficient modulation in this platform. Despite all the efforts, still rather low 𝜒(2) values have been measured in strained silicon devices. In addition, the way of applying strain has not barely changed since the concept was proposed, usually consisting on a silicon waveguide covered by a stressor material such as silicon nitride. In this letter, a SiGe slot approach is explored as a different route to enhance the strain induced Pockels effect in the mid-IR range. Such approach would allow effective index change values which are near to 10 −4 and improve the values expected for the most common silicon -silicon nitride structure by more than three orders of magnitude.

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Section: Introductionmentioning

confidence: 91%

A SiGe Slot Approach for Enhancing Strain Induced Pockels Effect in the Mid-IR Range

Olivares

Sanchís

2021

IEEE Photon. Technol. Lett.

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“…The relationship between the effective refractive index of ring resonator variation (Δ n eff ) and linear Pockels effect due to applied bias can be described by , normalΔ n eff = χ eff false( 2 false) E n normalg 2 n 0 2 0.25em where χ eff (2) represents the modal average effective second-order susceptibility, E is the external electric field, n g is the group index, and n 0 is the material refractive index. In this study, we focus on the transverse electric (TE) mode of the resonator where the ordinary refractive index is used as the material refractive index.…”

Section: Design and Fabrication Of Microring Modulatorsmentioning

confidence: 99%

Enhanced Pockels Effect in AlN Microring Resonator Modulators Based on AlGaN/AlN Multiple Quantum Wells

et al. 2022

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AlN-on-sapphire is a promising integrated photonic platform for operation over a wide wavelength range from ultraviolet to infrared. However, this platform suffers from a weak second-order electro-optic effect, also known as the Pockels effect. Here, we demonstrate an enhanced Pockels effect by utilizing AlGaN/AlN multiple quantum wells (MQWs) regrown on the AlN layer. This enhancement is attributed to the large built-in polarization field in the MQWs, which results in a higher second-order susceptibility in the MQW layer due to the electric-field-induced second-order effect overlapping with the optical mode of the waveguiding device. To investigate this enhancement, we design and fabricate separate AlN microring resonator modulators (MRMs) with MQWs operating at two different wavelengths, 1550 and 780 nm. The resonance shift due to the Pockels effect is characterized by applied voltages and compared with the AlN MRM of similar dimensions but without MQWs. We observe enhanced resonance shift factors of 2.16 (at 1550 nm) and 1.56 (at 780 nm) for resonators with MQWs compared to those without MQWs. Through a modal overlap analysis between the MQW layers and the optical mode of the resonator, we extract the second-order susceptibility in the MQW regions, which is shown to be 20 (at 1550 nm) and 10 times (at 780 nm) higher compared to that of AlN. Our study paves a promising path for realizing III-nitride-integrated photonic modulators with a stronger Pockels effect by employing MQWs with an optimal overlap with the optical mode of the modulator.

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“…Optical phase modulation by means of Pockels effect has also been investigated in silicon waveguides by breaking the crystal symmetry with a highly stressed layer deposited on top 7 , 8 . Alternatively, quadratic electro-optic or DC Kerr effect has been demonstrated using a p-i-n structure under reverse bias 9 , 10 . However, to date, the phase modulation efficiency is rather low with both approaches.…”

Section: Introductionmentioning

confidence: 99%

All-optical phase control in nanophotonic silicon waveguides with epsilon-near-zero nanoheaters

Parra

Pernice

Sanchís

2021

Sci Rep

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A wide variety of nanophotonic applications require controlling the optical phase without changing optical absorption, which in silicon (Si) photonics has been mostly pursued electrically. Here, we investigate the unique light–matter interaction exhibited by epsilon-near-zero (ENZ) materials for all-optical phase control in nanophotonic silicon waveguides. Thermo-optic all-optical phase tuning is achieved using an ENZ material as a compact, low-loss, and efficient optical heat source. For a 10-$$\upmu $$ μ m-long ENZ/Si waveguide, insertion loss below 0.5 dB for the transverse electric (TE) polarization is predicted together with a high control efficiency of $$\sim 0.107\uppi $$ ∼ 0.107 π $$\hbox {mW}^{-1}$$ mW - 1 . Our proposal provides a new approach to achieve all-optical, on-chip, and low-loss phase tuning in silicon photonic circuits.

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Field-Induced Nonlinearities in Silicon Waveguides Embedded in Lateral p-n Junctions

Cited by 10 publications

References 25 publications

A SiGe Slot Approach for Enhancing Strain Induced Pockels Effect in the Mid-IR Range

A SiGe Slot Approach for Enhancing Strain Induced Pockels Effect in the Mid-IR Range

Enhanced Pockels Effect in AlN Microring Resonator Modulators Based on AlGaN/AlN Multiple Quantum Wells

All-optical phase control in nanophotonic silicon waveguides with epsilon-near-zero nanoheaters

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